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Details, datasheet, quote on part number:NTE480
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| Part: | NTE480 |
| Category: | Discrete => Transistors => Bipolar => RF |
| Description: | Silicon NPN Transistor. RF Power Output For Broadband Amp, po = 40W @ 512 Mhz. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE480 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE480
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Datasheet text preview:
NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz
Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: D Designed for UHF Commercial Equipment D 38W with Greater than 5.8dB Gain D Withstands 20:1 VSWR Min., All Phase Angles D Tuned Q Technology D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter Static CollectorEmitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1 V(BR)CES IC = 15mA, VBE = 0, Note 1 EmitterBase Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 5mA, iC = 0 ICES hFE VCE = 12.5V, VBE = 0 VCE = 5V, IC = 1A 16 36 4 20 5 V V V mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Static Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz VCE = 12.5V, f = 470MHz VCE = 12.5V, f = 470MHz VCE = 12.5V, Pi = 10W, f = 470MHz 38 5.8 40 2 j1.3 1.6 j1.8 95 W dB pF Symbol Test Conditions Min Typ Max Unit
.205 (5.18)
.215 (5.48) .122 (3.1) Dia
E .405 (10.3) Min
B
C
E
.155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85)
.160 (4.06)
.725 (18.43) .975 (24.78)
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