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Details, datasheet, quote on part number:NTE483
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| Part: | NTE483 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Silicon NPN Transistor. RF Power Output For Mobile Use, po = 18W @ 866 MHZ |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE483 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE483
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Datasheet text preview:
NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz
Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806866MHz. Features: D Designed for 806866MHz Mobile Equipment D 18W Min., with Greater than 6dB Gain at 836MHz D Withstands 10:1 VSWR at Rated Operating Conditions D Matched Input Technology D Common Base Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter Static CollectorEmitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1 V(BR)CES IC = 50mA, VBE = 0, Note 1 EmitterBase Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 10mA, iC = 0 ICES hFE VCE = 15V, VBE = 0 VCE = 6V, IC = 1A 16 36 4 20 10 V V V mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Dynamic Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, Pi = 15W, f = 836MHz 18 6 3.0 j4.8 1.6 j2.5 20 W dB pF Symbol Test Conditions Min Typ Max Unit
.725 (18.42)
.325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia B C
.960 (24.38) Max
E
B
.225 (5.72) Max .380 (5.72) Dia Max
.285 (7.25) Max
.180 (4.57) Max
.730 (18.54) .960 (24.38) Max
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