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Details, datasheet, quote on part number:NTE484
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| Part: | NTE484 |
| Category: | Discrete => Transistors => Bipolar => RF |
| Description: | Silicon NPN Transistor. RF Power Output For Mobile Use, po = 25W @ 947MHz |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE484 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE484
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Datasheet text preview:
NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz
Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features: D Designed for 800 MHz Mobile Communications Equipment D 25W Min., with Greater than 5dB Gain at 836MHz D Withstands Infinite VSWR at Rated Operating Conditions D Internal Input matched "Tuned Q" D Common Base Configuration Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter Static CollectorEmitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1 V(BR)CES IC = 50mA, VBE = 0, Note 1 EmitterBase Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 10mA, IC = 0 ICES hFE VCE = 15V, VBE = 0 VCE = 6V, IC = 1A 16 36 4 20 10 V V V mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Dynamic Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, PO= 25W, f = 836MHz 25 5 4.9 j5.8 1.4 j3.5 65 W dB pF Symbol Test Conditions Min Typ Max Unit
.725 (18.42)
.325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia B C
.960 (24.38) Max
E
B
.225 (5.72) Max .380 (5.72) Dia Max
.285 (7.25) Max
.180 (4.57) Max
.730 (18.54) .960 (24.38) Max
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