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Details, datasheet, quote on part number:NTE488
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Datasheet text preview:
NTE488 Silicon NPN Transistor RF Power Output
Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +175°C Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter EmitterBase Breakdown Voltage CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage Symbol V(BR)EBO V(BR)CBO IC = 10mA, IE = 0 V(BR)CEO IC = 50A, RBE = Test Conditions Min 4 35 17 Typ Max Unit V V V
Electrical Characteristics (Cont'd): (TC = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol ICBO IEBO hFE PO Test Conditions VCB = 25V, IE = 0 VEB = 3V, IO = 0 VCE = 10V, IC = 0.1A, Note 1 VCC = 13.5V Pin = 0.3W, f = 175MHz Min 10 3.5 50 Typ 50 4.0 60 Max Unit 500 500 180 µA µA W %
Note 1. Pulse Test: PW = 150µs duty = 5%.
.370 (9.39) Dia Max .355 (9.03) Dia Max
.260 (6.6) Max
.500 (12.7) Min
.018 (0.45) Dia Base Emitter/Case Collector
45°
.031 (.793)
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