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Details, datasheet, quote on part number:NTE489
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| Part: | NTE489 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) |
| Description: | Silicon P-channel JFET Transistor. General Purpose af Amplifier. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE489 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE489
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Datasheet text preview:
NTE489 Silicon PChannel JFET Transistor General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) GateDrain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V GateSource Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +135°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Lead Temperature (During Soldering, 1/16" from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +300°C Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Static Characteristics GateSource Breakdown Voltage Gate Reverse Current GateSource Cutoff Voltage Gate Current Saturation Drain Current Dynamic Characteristics CommonSource Forward Transconductance CommonSource Output Conductance CommonSource Input Capacitance CommonSource Reverse Transfer Capaticance Equivalent ShortCircuit Input Noise Voltage gfs gos Ciss Crss en VDS = 15V, VGS = 0, f = 1kHz, Note 3 VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz VDS = 10V, ID = 2mA, f = 1kHz 6000 15000 µmho 200 µmho pF pF nV pHz V(BR)GSS IG = 1µA, VDS = 0 IGSS VGS(off) IG IDSS VGS = 20V, VDS = 0, Note 2 ID = 1nA, VDS = 15V ID = 2mA, VDG = 15V, Note 2 VDS = 15V, VGS = 0 30 0.5 2 15 200 2.0 15 V pA V pA mA Symbol Test Conditions Min Typ Max Unit
32 4 6
Note 2. Approximately doubles for every 10°C increase in TA. Note 3. Pulse test duration = 2ms.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
DGS .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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