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Details, datasheet, quote on part number:NTE49
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| Part: | NTE49 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | NTE49 (NPN) & NTE50 (PNP), Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE49 datasheet File size : 28 kB |
| Request For quote: | Find where to buy NTE49
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Datasheet text preview:
NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Note 1. NTE49 is a discontinued device and no longer available.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage Collector Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE IC = 50mA, VCE = 1V IC = 250mA, VCE = 1V IC = 500mA, VCE = 1V CollectorEmitter Saturation Voltage BaseEmitter ON Voltage SmallSignal Characteristics Current GainBandwidth Product Output Capacitance fT Cob IC = 250mA, VCE = 5V, f = 100MHz, Note 1 VCB = 10V, IE = 0, f = 100kHz 50 150 6 12 MHz pF VCE(sat) VBE(on) IC = 250mA, IB = 10mA IC = 250mA, IB = 25mA IC = 250mA, VCE = 5V 80 60 125 100 55 0.18 0.1 0.74 0.4 1.2 V V V V(BR)CEO IC = 1mA, IB = 0 V(BR)EBO IE = 100µA, IC = 0 ICBO VCB = 40V, IE = 0 100 4 100 V V nA Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.380 (9.56)
.180 (4.57)
C
.132 (3.35) Dia
.500 (12.7) 1.200 (30.48) Ref .325 (9.52)
.300 (7.62)
.070 (1.78) x 45° Chamf .050 (1.27)
.400 (10.16) Min E B C
.100 (2.54)
.100 (2.54)
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