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Details, datasheet, quote on part number:NTE490
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| Part: | NTE490 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | MOSFET, N-ch, Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE490 datasheet File size : 21 kB |
| Request For quote: | Find where to buy NTE490
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Datasheet text preview:
NTE490 MOSFET NCh, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics DrainSource Breakdown Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold Voltage Static DrainSource ON Resistance Drain Cutoff Current Forward Transconductance SmallSignal Characteristics Input Capacitance Switching Characteristics TurnOn Time TurnOff Time ton toff ID = 200mA ID = 200mA 4 4 10 10 ns ns Ciss VDS = 10V, VGS = 0, f = 1MHz 60 pF VGS(Th) rDS(on) ID(off) gfs VDS = VGS, ID = 1mA VGS = 10V, ID = 200mA VDS = 25V, VGS = 0 VDS = 10V, ID = 250mA 0.8 2.0 1.8 200 3.0 5.0 0.5 V V(BR)DSS VGS = 0, ID = 100µA IGSS VGS = 15V, VDS = 0 60 90 0.01 10 V nA Symbol Test Conditions Min Typ Max Unit
µA mmhos
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
DGS .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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