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Details, datasheet, quote on part number:NTE492
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| Part: | NTE492 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) |
| Description: | MOSFET, N-ch, Enhancement Mode, High Speed Switch. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE492 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE492
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Datasheet text preview:
NTE492 MOSFET NCh, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Note 2. Pulse Width 300µs, Duty Cycle 2%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics ZeroGateVoltage Drain Current DrainSource Breakdown Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold Voltage Static DrainSource ON Resistance SmallSignal Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Forward Transconductance Ciss Crss Coss gfs VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, VGS = 0, f = 1MHz VDS = 25V, ID = 250mA 60 6.0 30 pF pF pF mmhos VGS(Th) rDS(on) ID = 1mA, VDS = VGS VGS = 10V, ID = 100mA VGS = 10V, ID = 250mA 1.0 4.5 4.8 3.0 6.0 6.4 V IDSS IGSS VDS = 130V, VGS = 0 VGS = 15V, VDS = 0 200 30 nA V nA V(BR)DSX VGS = 0, ID = 100µA Symbol Test Conditions Min Typ Max Unit
0.01 10.0
200 400
Note 2. Pulse Width 300µs, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Switching Characteristics TurnOn Time TurnOff Time ton toff 6.0 15.0 12 15 ns ns Symbol Test Conditions Min Typ Max Unit
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (0.45) Dia Max
DGS .100 (2.54) .050 (1.27)
.156 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
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