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Details, datasheet, quote on part number: NTE5414
 
 
Part numberNTE5414
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). 4 Amp, Sensitive Gate. Repetitive Peak Voltage And Reverse Blocking Voltage (Vdrm, Vrrm) 30V.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5414 datasheet
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Specifications, Features, Applications
NTE5411 thru NTE5416 Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features: D Passivated Surface for Reliability and Uniformity D Power Rated at Economical Prices D Practical Level Triggering and Holding Characteristics Absolute Maximum Ratings: (TC = +110°C unles otherwise specified) Repetitive Peak Forward and Reverse Blocking Voltage, VDRM, VRRM (1/2 Sine Wave, RGK to +110°C, Note NTE5416. 600V Non­Repetitive Peak Reverse Blocking Voltage , VRSM (1/2 Sine Wave, RGK NTE5416. 650V Average On­State Current, IT(AV) +100°C. 1.6A Surge On­State Current (TC = +90°C), ITSM 1/2 Sine wave, 25A 1/2 Sine wave, 1.5ms. 35A Circuit Fusing I2t. 2.6A2s Peak Gate Power (Pulse Width = +90°C), PGM. 0.5W Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

Absolute Maximum Ratings (Cont'd): (TC = +110°C unles otherwise specified) Average Gate Power = +90°C), PG(AV). 0.1W Peak Forward Gate Current, IGM. 0.2A Peak Reverse Gate Voltage, VRGM. 6V Operating Junction Temperature Range, TJ. to +110°C Storage Temperature Range, Tstg. to +150°C Thermal Resistance, Junction­to­Case, RthJC. 3°C/W Thermal Resistance, Junction­to­Ambient, RthJA. 75°C/W Mounting Torque (Note 2). 6 in. lb. Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case­to­sink thermal resistance. Anode lead and heatsink contact pad are common. Electrical Characteristics: (TC = +25°C, RGK = 1000 unles otherwise specified)

Parameter Peak Forward or Reverse Blocking Current Peak Forward "ON" Voltage Gate Trigger Current (Continuous DC, Note 4) Gate Trigger Voltage (Continuous DC) Gate Non­Trigger Voltage Holding Current Symbol IDRM, IRRM VTM IGT VGT VGD IH Test Conditions Rated VDRM or VRRM, = +25°C Rated VDRM or VRRM, = +110°C ITM = 8.2A Peak, Note 3 VAK = 24 VAK = ­40°C Source Voltage = 50, VAK = ­40°C VAK = Rated VDRM, = +110°C VAK = 12V, IGT = +25°C Initiating On­State Current = ­40°C Total Turn­On Time tgt Source Voltage = 6k, ITM = 8.2A, IGT = 2mA, Rated VDRM, Rise Time = 20ns, Pulse Width VD = Rated VDRM, = +110°C Min Typ Max Unit mA µs

Note 3. Pulse Width to 2ms, Duty Cycle = 2%. Note 4. Measurement does not include RGK current.



Related products with the same datasheet
NTE5412   NTE5413   NTE5415   NTE5416  


Some Part number from the same manufacture NTE Electronics, Inc.
NTE5415 Silicon Controlled Rectifier (SCR). 4 Amp, Sensitive Gate. Repetitive Peak Voltage And Reverse Blocking Voltage (Vdrm, Vrrm) 30V.
NTE5417 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 10A.
NTE5424 Silicon Controlled Rectifier (SCR) For TV Power Supply Switcing. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 5.0A.
NTE5426 Silicon Controlled Rectifier (SCR). Sensitive Gate. Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 10A.
NTE5427 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 200V. RMS On-state Current it = 7A.
NTE5437 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 8A.
NTE5440 Silicon Controlled Rectifier (SCR). ISOlated Tab. Repetitive Peak Voltage VRRM = 800V. RMS On-state Current it = 9A.
NTE5442 Silicon Controlled Rectifier (SCR). Peak Repetitive Forward And Reverse Blocking Voltage Vrrm(or Vdrm) = 50V. RMS On-state Current it = 8A.
NTE5452 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.
NTE5460 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 800V. On-state RMS Current it = 25A.
NTE5461 Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage, Repetitive Peak Off-state Voltage Vrrm,vdrm = 50V. RMS Forward Current it = 10A.
NTE5470 Silicon Controlled Rectifier (SCR). Peak Repetitive Reverse And Reverse Blocking Voltage Vrrm,vdrm = 50V. Forward Current RMS Itrms = 8A.
NTE5480
NTE5487 Silicon Controlled Rectifier ( SCR ) 8 Amp
NTE5491 Silicon Controlled Rectifier (SCR), 10 Amp. Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 100V. RMS On-state Current Itrms = 25A.
NTE5498 Silicon Controlled Rectifier (SCR). Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 400V. RMS On-state Current Itrms = 12A.
NTE54MP NTE54 (NPN) & NTE55 (PNP), Silicon Complementary Transistors High Frequency Driver For Audio Amplifier
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NTE5500 Silicon Controlled Rectifier (SCR), 16 Amp. Peak Forward Blocking Voltage, Peak Reverse Blocking Voltage Vdrm,Vrsm(rep) = 25V. Forward Current RMS it = 25A.
NTE5511 Silicon Controlled Rectifier (SCR), 5 Amp. Peak Reverse Voltage (repetitive) Vrm(rep) = 200V. Forward Current RMS Ifrms = 5A.