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Details, datasheet, quote on part number: NTE5437
 
 
Part numberNTE5437
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 400V. RMS On-state Current it = 8A.
CompanyNTE Electronics, Inc.
DatasheetDownload NTE5437 datasheet
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Specifications, Features, Applications

Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak Off­State Voltage (TJ to +125°C, RGK = 1k), VDRM, VRRM NTE5438. 600V On­State Current (All Conducting Angles, = +85°C), IT(RMS). 8A Average On­State Current (Half Cycle, = +85°C), IT(AV). 5.1A Non­Repetitive On­State Current, ITSM Half Cycle, 60Hz. 88A Half Cycle, 50Hz. 80A Fusing Current (t= 10ms, Half Cycle), I2t. 32A2s Peak Reverse Gate Voltage (IGR = 50µA), VGRM. 8V Peak Gate Current (10µs Max), IGM. 2A Peak Gate Dissipation (10µs Max), PGM. 5W Gate Dissipation (20ms Max), PG(AV). 0.5W Oprating Junction Temperature Range, TJ. to +125°C Storage Temperature Range, Tstg. to +125°C Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), TL. +250°C Thermal Resistance, Junction­to­Case, RthJC. 4K/W Thermal Resistance, Junction­to­Ambient, RthJA. 60K/W Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Off­State Leakage Current Symbol Test Conditions = +25°C Min ­ Max 0.5 5.0 Unit mA µA IDRM, IRRM VDRM + VRRM = Rated Voltage, RGK = 1k

Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)

Parameter On­State Voltage On­State Threshold Voltage On­State Slope Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn­Off Time Symbol VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd = 7V RGK = 1k RGK =.67 x VDRM, RGK = 10mA, diG/dt = 10mA, diG/dt =.67 x VDRM, = 5.1A Test Conditions = +25°C Min Max Unit V mA V/µs A/µs ns µs




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NTE5438  


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