Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Repetitive Peak OffState Voltage (TJ to +125°C, RGK = 1k), VDRM, VRRM NTE5438. 600V OnState Current (All Conducting Angles, = +85°C), IT(RMS). 8A Average OnState Current (Half Cycle, = +85°C), IT(AV). 5.1A NonRepetitive OnState Current, ITSM Half Cycle, 60Hz. 88A Half Cycle, 50Hz. 80A Fusing Current (t= 10ms, Half Cycle), I2t. 32A2s Peak Reverse Gate Voltage (IGR = 50µA), VGRM. 8V Peak Gate Current (10µs Max), IGM. 2A Peak Gate Dissipation (10µs Max), PGM. 5W Gate Dissipation (20ms Max), PG(AV). 0.5W Oprating Junction Temperature Range, TJ. to +125°C Storage Temperature Range, Tstg. to +125°C Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), TL. +250°C Thermal Resistance, JunctiontoCase, RthJC. 4K/W Thermal Resistance, JunctiontoAmbient, RthJA. 60K/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OffState Leakage Current Symbol Test Conditions = +25°C Min Max 0.5 5.0 Unit mA µA IDRM, IRRM VDRM + VRRM = Rated Voltage, RGK = 1k
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter OnState Voltage OnState Threshold Voltage OnState Slope Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated TurnOff Time Symbol VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd = 7V RGK = 1k RGK =.67 x VDRM, RGK = 10mA, diG/dt = 10mA, diG/dt =.67 x VDRM, = 5.1A Test Conditions = +25°C Min Max Unit V mA V/µs A/µs ns µs
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