|
Details, datasheet, quote on part number:NTE5472
| |
| Part: | NTE5472 |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) |
| Description: | Silicon Controlled Rectifier (SCR). Peak Repetitive Reverse And Reverse Blocking Voltage Vrrm,vdrm = 200V. Forward Current RMS Itrms = 8A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5472 datasheet File size : 22 kB |
| Request For quote: | Find where to buy NTE5472
|
| |
Datasheet text preview:
NTE5470 thru 5476 Silicon Controlled Rectifier (SCR) 5 Amp
Description: The NTE5470 through NTE5476 are multipurpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: D Uniform LowLevel NoiseImmune Gate Triggering D Low Forward "ON" Voltage D High SurgeCurrent Capability Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM NTE5470 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5471 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5472 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5473 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5474 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5475 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5476 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Forward Surge Current (One Cycle, 60Hz, TJ = 40° to +100°C), ITSM . . . . . . . . . . . . . . 100A Circuit Fusing (TJ = 40° to +100°C, t 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.
Electrical Characteristics: (TC = +25°C unles otherwise specified)
Parameter Peak Forward or Reverse Blocking Current Symbol IDRM, IRRM IGT VGT Test Conditions Rated VDRM or VRRM, TJ = +25°C Gate Open TJ = +100°C VD = 7V, RL = 100, Note 3 VD = 7V, RL = 100 TC = 40°C TJ = +100°C Forward "ON" Voltage Holding Current vTM IH ton toff ITM = 15.7A, Note 4 VD = 7V, Gate Open TC = 40°C TurnOn Time (td + tr) TurnOff Time IG = 20mA, IF = 5A, VD = Rated VDRM IF = 5A, IR = 5A, VD = Rated VDRM, dv/dt = 30V/µs TC = 40°C Min 0.2 TJ = +100°C Typ 10 0.75 1.4 10 1 15 25 50 Max Unit 10 2 30 60 1.5 2.5 2.0 30 60 µA mA mA mA V V V V mA mA µs µs µs V/µs
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
Forward Voltage Application Rate (Exponential)
dv/dt
Gate Open, TJ = +100°C, VD = Rated VDRM
Note 3. For optimum operation, i.e. faster turnon, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. Note 4. Pulsed, 1ms Max, Duty Cycle 1%.
.431 (10.98 Max
Gate
Cathode
.855 (21.7) Max
.125 (3.17) Max .453 (111.5) Max
Anode 1032 UNF2A
|
|
