|
Details, datasheet, quote on part number:NTE5495
| |
Datasheet text preview:
NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp
Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for halfwave AC control applications such as motor controls, heating controls, power supplies, or wherever halfwave silicon gatecontrolled, solidstate devices are needed. Features: D GlassPassivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Peak Repetitive OffState Blocking Voltage, VRRM, VDRM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak NonRepetitive Reverse Voltage, VRSM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V RMS OnState Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Average OnState Current (TC = +65°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak NonRepetitive Surge Current, ITSM (One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A Circuit Fusing Considerations (TJ = 40° to +125°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 93A2s Peak Gate Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Forward Gate Current, IGT NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Typical Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Average Forward Blocking Current NTE5491 NTE5492 NTE5494 NTE5496 Average Reverse Blocking Current NTE5491 NTE5492 NTE5494 NTE5496 Peak Forward Blocking Current Peak Reverse Blocking Current Peak OnState Voltage DC GateTrigger Current DC GateTrigger Voltage Gate NonTrigger Voltage DC Holding Current Critical RateofRise of OffState Voltage IDRM IRRM VTM IGT VGT VGD IH dv/dt Rated VDRM, Gate Open Rated VRRM, Gate Open, TJ = +125°C ITM = 50.3A Peak, Note 1 VAK = 12VDC, RL = 50 VAK = 12VDC, RL = 50 VAK = 12V, Gate Open Rated VDRM, Exponential Waveform, TC = +125°C, Gate Open IR(AV) Rated VRRM , Gate Open TJ = +125°C Symbol ID(AV) Test Conditions Rated VDRM , Gate Open TJ = +125°C Min Typ Max Unit 0.65 7.3 30 6.5 6.0 4.0 2.5 6.5 6.0 4.0 2.5 10 20 2 40 2.0 50 mA mA mA mA mA mA mA mA µA mA V mA V V mA V/µs
Rated VDRM, RL = 50, TJ = +125°C 0.25
Note 1. Pulse Test: Pulse Width 1ms, Duty Cycle 2%.
.562 (14.28) Max
Gate
Cathode
1.193 (30.33) Max
.200 (5.08) Max
.453 (11.5) Max
Anode 1/428 UNF2A
|
|
