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Details, datasheet, quote on part number:NTE5498
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| Part: | NTE5498 |
| Description: | Silicon Controlled Rectifier (SCR). Peak Repetitive Off-state Blocking Voltage Vrrm,vdrm = 400V. RMS On-state Current Itrms = 12A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5498 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE5498
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Datasheet text preview:
NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp
Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Repetitive OffState Voltage (TJ = 40° to +125°C, RGK = 1k), VDRM, VRRM NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A Average OnState Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A NonRepetitive OnState Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A NonRepetitive OnState Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s Peak Gate Current (10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate Dissipation (10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +125°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OffState Leakage Current OnState Voltage OnState Threshold Voltage OnState Slope Resistance GateTrigger Current GateTrigger Voltage Symbol IDRM, IRRM VT VT(TO) rT IGT VGT Test Conditions VDRM + VRRM, RGK = 1k IT = 24A, TJ = +25°C TJ = +125°C TJ = +125°C VD = 7V VD = 7V TJ = +125°C TJ = +25°C Min Typ Max 5 1.5 5.0 1.8 1.0 36 10 2.0 Unit mA µA V V m mA V
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated TurnOff Time Symbol IH IL dv/dt di/dt tgd tq RGK = 1k RGK = 1k IG = 50mA, diG/dt = 0.5A/µs, TJ = +125°C IG = 50mA, diG/dt = 0.5A/µs VD = .67 x VDRM, VR = 35V, IT = IT(AV), TC = +85°C Test Conditions Min Typ Max 100 40 30 500 50 Unit mA mA V/µs A/µs ns µs
VD = .67 x VDRM, RGK = 1k, TJ = +125°C 100
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
Anode .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Cathode .100 (2.54)
Gate Anode
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