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Details, datasheet, quote on part number:NTE5512
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| Part: | NTE5512 |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) |
| Description: | Silicon Controlled Rectifier (SCR), 5 Amp. Peak Reverse Voltage (repetitive) Vrm(rep) = 400V. Forward Current RMS Ifrms = 5A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5512 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE5512
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Datasheet text preview:
NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp
Description: The NTE5511 thru NTE5513 alldiffused, three junction, silicon controlled rectifiers (SCR's) are intended for use in powercontrol and powerswitching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for HighVolume Systems D Readily Adaptable for PC Boards and Metal Heat Sinks D Low Switching Losses D High di/dt and dv/dt Capabilities D Shorted Emitter GateCathode Construction D Forward and Reverse Gate Dissipation Ratings D AllDiffused Construction Assures Exceptional Uniformity and Stability of Characteristics D DirectSoldered Internal Construction Assures Exceptional Resistance to Fatigue D Symmetrical GateCathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation D AllWelded Construction and Hermetic Sealing D Low Leakage Currents, Forward and Reverse D Low Forward Voltage Drop at High Current Levels D Low Thermal Resistance
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (NonRepetitive), VRM (nonrep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Peak Reverse Voltage (Repetitive), VRM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Forward Blocking Voltage (Repetitive), VFBOM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average DC Forward Current, IF(av) (TC = +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A SubCycle Surge (NonRepetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +125°C Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5µs rise time Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
Electrical Characteristics: (At Maximum Ratings, TC = +25°C unless otherwise specified)
Parameter Forward Breakover Voltage NTE5511 NTE5512 NTE5513 Peak Blocking Forward Current NTE5511 NTE5512 NTE5513 Peak Blocking Reverse Current NTE5511 NTE5512 NTE5513 Forward Voltage Drop DC GateTrigger Current DC GateTrigger Voltage Holding Current Critical Rate of Applied Forward Voltage TurnOn Time (Delay Time + Rise Time) TurnOff Time (Reverse Recovery Time + Gate Recovery Time) Thermal Resistance, JunctiontoCase vF IGT VGT IHold dv/dt ton toff VFB = vBOO (min), exponential rise, TC = +100°C VFB = vBOO (min), iF = 4.5A, IGT = 200mA, 0.1µs rise time iF = 2A, 50µs pulse width, dvFB/dt = 20V/µs, dir/dt = 30A/µs, IGT = 200mA, TC = +75°C IRBOM IFBOM VFBO = 200V VFBO = 400V VFBO = 600V VRBO = 200V VRBO = 400V VRBO = 600V IF = 30A TC = +100°C TC = +100°C Symbol v B OO Test Conditions TC = +100°C 200 400 600 10 0.75 0.10 0.20 0.40 0.05 0.10 0.20 2.15 8 1.2 10 200 1.5 15 1.5 3.0 4.0 0.75 1.5 2.0 2.80 15 2.0 20 50 V V V mA mA mA mA mA mA V mA V mA V/µs µs µs Min Typ Max Unit
RJC
4
°C/W
.485 (12.3) Dia .062 (1.57)
.295 (7.5)
.031 (0.78) Dia .960 (24.3) .580 (14.7)
.360 (9.14) Min Gate
.147 (3.75) Dia (2 Places) .145 (3.7) R Max
.200 (5.08)
Anode/Case
Cathode
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