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Details, datasheet, quote on part number:NTE5645
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| Part: | NTE5645 |
| Category: | Discrete => Thyristors => Triacs |
| Description: | Triac, 10A, ISOlated Tab. Repetitive Peak Off-state Voltage VDRM = 600V. RMS On-state Current 10A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5645 datasheet File size : 20 kB |
| Request For quote: | Find where to buy NTE5645
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Datasheet text preview:
NTE5645 TRIAC 10A Isolated Tab
Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, voidfree glass passivated chips. This device is a bidirectional triode thyristor and may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) . . . . . . . . . . . . . . . . . 10A Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 100A Peak GateTrigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak GatePower Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Average GatePower Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +100°C Typical Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter Peak OffState Current Max. OnState Voltage DC Holding Current Critical RateofRise of OffState Voltage DC Gate Trigger Current T2 (+) Gate (+), T2 () Gate () T2 (+) Gate (), T2 () Gate (+) Symbol IDRM VTM IH Critical dv/dt IGT Test Conditions VDRM = 600V, Gate Open, TJ = +100°C IT = 14A Gate Open VD = 600V, Gate Open, TC = +100°C VD = 12V, RL = 30 Min Typ Max Unit 5 2 2.2 50 mA V mA V/µs
50 80
mA mA
Electrical Characteristics (Cont'd): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter DC Gate Trigger Voltage GateControlled TurnOn Time Symbol VGT tgt Test Conditions VD = 12V, RL = 30 VD = 600V, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak) Min Typ Max Unit 2.5 2.5 V µs
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
Isolated .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
MT1 .100 (2.54)
Gate MT2
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