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Details, datasheet, quote on part number:NTE5646
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Datasheet text preview:
NTE5646 TRIAC Internally Triggered
Description: The NTE5646 is a TRIAC that includes a diac trigger mounted inside the same package. This device saves the user the added expense of buying a discrete diac and the assembling associated with a gated triac. This device includes a dial trigger mounted inside the same isolated TO220 type package. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 600V RMS OnState Current (TC = +80°C, Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . . . . 10A Peak Surge (NonRepetitive) OnState Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . 100A Peak GateTrigger Current (3sec Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Typical Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W Note 1. All values apply in either direction. Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Peak OffState Current Maximum OnState Voltage DC Holding Current Critical RateofRise of OffState Voltage Critical RateofRise of Commutation Voltage GateControlled TurnOn Time Trigger DIAC Specifications Breakover Voltage Symmetry Breakover Voltage (Forward & Reverse) Dynamic Breakback Voltage (Forward & Reverse) Peak Breakover Current Trigger Firing Capacitance V(BO) VBO [V ±] IBO C 30 3 5 200 0.1 45 V V V µA µF Symbol IDRM VTM IHOLD Critical dv/dt Test Conditions Gate Open, TV = +110°C, VDRM = 600V, Note 1 IT = 10A, Note 1 Gate Open, Note 1 VD = 600V, Gate Open, TC = +110C, Note 1 Min Typ 0.5 60 4 3 Max 1.5 60 Unit mA V mA V/µs V/µs µs
Commutating TC = +80°C, Gate Unenergized, dv/dt VD = 600V, IT = 10A, Note 1 Tgt VD = 600V, tR = 0.1µs, IT = 10A (Peak)
Note 1. All values apply in either direction.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
Isolated .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
MT1 .100 (2.54)
Gate MT2
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