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Details, datasheet, quote on part number:NTE5650
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| Part: | NTE5650 |
| Category: | Discrete => Thyristors => Triacs |
| Description: | Triac, 2.5A. Repetitive Peak Off-state Voltage VDRM = 100V. RMS On-state Current 3A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5650 datasheet File size : 21 kB |
| Request For quote: | Find where to buy NTE5650
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Datasheet text preview:
NTE5650 thru NTE5653 TRIAC 100VRM, 2.5A
Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a voidfree glass passivated chip and are hermetically sealed in TO5 outline cans. The NTE5650 through NTE5653 are bidirectional triode thyristors and may be switched from off state to conduction for either polarity of applied voltage with positive or negative gatetrigger current and are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (TJ = +90°C, Gate Open, Note 1), VDROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (TC = +75°C and Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . 3A Peak Surge (NonRepetitive) OnState Current (OneCycleat 50Hz or 60Hz), ITSM . . . . . . . . 30A Peak GateTrigger Current (3µsec, Max.), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak GatePower Dissipation (IGT IGTM for 3µsec. Max.), PGM . . . . . . . . . . . . . . . . . . . . . . . . 20W Average GatePower Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Typical Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Note 1. All values apply in either direction. Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)
Parameter Peak OffState Current Maximum OnState Voltage DC Holding Current Critical RateofRise of OffState Voltage DC GateTrigger Current MT2 (+) Gate (+), MT2 () Gate () MT2 (+) Gate (), MT2 () Gate (+) Symbol IDROM VTM IHO Critical dv/dt IGT Test Conditions TJ = +90°C, VDROM = Max Rating, Gate Open, Note 1 TC = +25°C, iT = 5A (Peak), Note 1 TC = +25°C, Gate Open TC = +90°C, vD = VDROM, Gate Open, Note 1 TC = + 25°C, vD = 6V, RL = 39 Min Typ 3 Max Unit 0.75 1.85 5 mA V mA V/µs
3
mA
Note 1. All values apply in either direction.
Electrical Characteristics (Cont'd): (At Maximum Ratings & Specified Case Temperature)
Parameter DC Gate Trigger Voltage GateControlled TurnOn Time Fusing Current (For TRIAC Protection) Symbol VGT tgt I2t Test Conditions TC = +25°C, vD = 6V, RL = 39 TC = +25°C, vD = VDROM, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak) T = 1.25 to 10ms Min Typ 2.2 Max Unit 2.2 3 V µs A2s
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35) Max
1.500 (38.1) Min
.019 (0.5) Dia Gate MT1 MT2
45°
.031 (.793)
TO5
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