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Details, datasheet, quote on part number:NTE5656
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| Part: | NTE5656 |
| Category: | Discrete => Thyristors => Triacs |
| Description: | Triac, 800mA, Sensitive Gate. Repetitive Peak Off-state Voltage VDRM = 400V. RMS On-state Current 800mA. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5656 datasheet File size : 20 kB |
| Request For quote: | Find where to buy NTE5656
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Datasheet text preview:
NTE5655 thru NTE5657 TRIAC 800mA Sensitive Gate
Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature voidfree glass passivated chips. These NTE devices are bidirectional triode thyristors and may be switched from offstate to conduction for either polarity of applied voltage with positive or negative gate trigger current. They are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, TJ = +100°C), VDRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (TC = +75°C, Conduction Angle of 360°C), ITRMS . . . . . . . . . . . . . . . 800mA Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . . 8A Peak GateTrigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak GatePower Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average GatePower Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Typical Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter Peak OffState Current Max. OnState Voltage DC Holding Current Critical RateofRise of OffState Voltage Symbol IDRM VTM IH Critical dv/dt Test Conditions VDRM = Max Rating, Gate Open, TJ = +100°C iT = 800mA (Peak) Gate Open VD = VDRM, Gate Open, TC = +100°C Min Typ 0.75 10 Max 1.9 15 Unit mA V mA V/µs
Electrical Characteristics (Cont'd): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter DC Gate Trigger Current T2 (+) Gate (+), T2 () Gate () T2 (+) Gate (), T2 () Gate (+) DC Gate Trigger Voltage GateControlled TurnOn Time Symbol IGT Test Conditions VD = 6V, RL = 100 Min Typ Max 5 Unit mA
VGT tgt
VD = 6V, RL = 100 VD = VDRM, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak)
2.2
2.2
V µs
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min MT1 Gate MT2
.021 (.445) Dia Max
.100 (2.54) .050 (1.27)
.105 (2.67) Max .205 (5.2) Max
.165 (4.2) Max .105 (2.67) Max
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