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Details, datasheet, quote on part number:NTE5699
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| Part: | NTE5699 |
| Category: | Discrete => Thyristors => Triacs |
| Description: | Triac, 25A. Repetitive Peak Off-state Voltage VDRM = 800V. RMS On-state Current 25A. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE5699 datasheet File size : 23 kB |
| Request For quote: | Find where to buy NTE5699
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Datasheet text preview:
NTE5699
TRIAC 800VRM, 25A TO220 Full Pack
Description: The NTE5699 TRIAC is designed primarily for fullwave AC control applications, such as lighting systems, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering. Features: D Blocking Voltage 800 Volts D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability D Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Peak Repetitive OffState Voltage, VDRM (TJ = 40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V Peak Gate Voltage (t 2µs), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V OnState Current RMS, IT(RMS) (TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak NonRepetitive Surge Current, ITSM (One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) . . . . . . 250A Peak Gate Power (t 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power (TC = +80°C, t 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Gate Current (t 2µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A RMS Isolation Voltage (TA = +25°C, Relative Humidity 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W Typical Thermal Resistance, CasetoSink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25°C and either polarity of MT2 to MT1, unless otherwise specified) Characteristics Peak Blocking Current (Rated VDRM, Gate Open) TJ = +25°C TJ = +125°C VTM Symbol IDRM 1.4 10 2 1.85 Min Typ Max Unit µA mA V
Peak OnState Voltage (ITM = 35A Peak; Peak Pulse Width 2ms, Duty Cycle 2%) Peak Gate Trigger Current (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Peak Gate Trigger Voltage (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10k, TJ = +110°C) MT2(+), G(+); MT2(+), G(); MT2(), G() MT2(), G(+) Holding Current (Main Terminal Voltage = 12Vdc, Gate Open IT = 200mA) TurnOn Time (Rated VDRM, ITM = 35A, IG = 120mA) Critical Rate of Rise of OffState Voltage (Rated VDRM, Exponential Waveform, TC = +125°C) Critical Rate of Rise of Commutation Voltage (Rated VDRM, ITM = 35A, Commutating di/dt = 13.4A/ms, Gate Unenergized, TC = +80°C)
IGT VGT 0.2 0.2 IH 1.1 1.1 1.1 1.3 0.4 0.4 10 2.0 2.0 2.0 2.5 50 20 20 20 30 50 50 50 75
mA
V
mA
tgt dv/dt dv/dt(c)
1.5 40 5
µs V/µs V/µs
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
MT2 Gate
MT1
.408 (10.36) Max .280 (7.11)
.185 (4.7) .110 (2.79)
.347 (8.8) .690 (17.53) .490 (12.45)
MT1
MT2 Gate
.500 (12.7) Min
.100 (2.54)
.105 (2.66)
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