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Details, datasheet, quote on part number:NTE593
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| Part: | NTE593 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | Silicon Diode, High Speed Switch. Repetitive Peak Reverse Voltage 85V. Average Rectified Forward Current 250mA. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE593 datasheet File size : 19 kB |
| Request For quote: | Find where to buy NTE593
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Datasheet text preview:
NTE593 Silicon Diode, High Speed Switch
Description: The NTE593 is a silicon epitaxial highspeed diode in an SOT23 type surface mount package. This device is intended for highspeed switching in hybrid thickfilm circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V NonRepetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current (TA +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thermal Resistance, JunctiontoAmbient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal o p e ra t io n . Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Forward Voltage Symbol VF Test Conditions IF = 1mA IF = 10mA IF = 50mA IF = 150mA Reverse Current Diode Capacitance Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA Recovery Charge (When switched from IF = 10mA to VR = 5V IR Cd trr VR = 75V VR = 75V, TJ = +150°C VR = 0, f = 1MHz measured at IR = 1mA, RL = 100 RL = 100 Min Typ Max 715 855 1000 1250 1 50 2 6 Unit mV mV mV mV µA µA pF ns
Qs
45
pC
.016 (0.48)
K A N.C.
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)
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