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Details, datasheet, quote on part number:NTE595
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| Part: | NTE595 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | Silicon Diode, Dual, Common Cathode, High Speed . Continuous Reverse Voltage 70V. DC Forward Current 250mA. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE595 datasheet File size : 19 kB |
| Request For quote: | Find where to buy NTE595
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Datasheet text preview:
NTE595 Silicon Diode, Dual, Common Cathode, High Speed
Description: The NTE595 consists of two silicon diodes in an SOT23 type surface mount package. The cathodes are common and the device is intended for highspeed switching applications in thick and thinfilm circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V NonRepetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +175°C Thermal Resistance, JunctiontoAmbient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal o p e ra t io n . Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter Forward Voltage Symbol VF Test Conditions IF = 1mA IF = 10mA IF = 50mA IF = 150mA Reverse Current Diode Capacitance Forward Recovery Voltage (When switched to IF = 10mA) IR Cd Vfr VR = 70V VR = 70V, TJ = +150°C VR = 0, f = 1MHz tr = 20ns Min Typ Max 715 855 1000 1250 5 100 1.5 1.75 Unit mV mV mV mV µA µA pF V
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter Reverse Recovery Time (When switched from IF = 10mA to IR = 10mA Recovery Charge (When switched from IF = 10mA to VR = 5V Symbol trr Test Conditions measured at IR = 1mA, RL = 100 RL = 100 Min Typ Max 6 Unit ns
Qs
45
pC
.016 (0.48)
K A A
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)
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