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Part: NTE629
Category:
Description: NTE629 & NTE630, Silicon Rectifier Fast Recovery, Dual, Center Tap
Company: NTE Electronics, Inc.
Datasheet: Download NTE629 datasheet File size : 17 kB
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Datasheet text preview:
NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap
Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: D Low Forward Voltage D High Current Capability D Fast Switching for High Efficiency D High Surge Capacity D Glass Passivated Chip Junction Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Working Peak Reverse Voltage, VRWM NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V DC Blocking Voltage, VR NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS Reverse Voltage, VR(RMS) NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V Average Rectifier Forward Current (Rated VR, TC = +150°C), IF(AV) Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A NonRepetitive Peak Surge Current, IFSM (8.3ms Single half SineWave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 250A Operating Junction Temperature Range (Reverse Voltage Applied), TJ . . . . . . . . . . 65° to +175°C Storage Temperature Range (Reverse Voltage Applied), Tstg . . . . . . . . . . . . . . . . . . . 65° to +175°C
Electrical Characteristics:
Parameter Instantaneous Forward Voltage Instantaneous Reverse Current Junction Capacitance Reverse Recovery Time NTE629 NTE630 Symbol VF IR CP trr IF = 8A At Rated VR, TC = +25°C At Rated VR, TC = +100°C Note 1 IF = 0.5A, IR = 1A, irr = 0.25A Test Conditions Min Typ 50 Max 1.3 10 250 150 250 Unit V µA µA pF ns ns
Note 1. Measured at 1MHz and applied reverse voltage of 4V.
.147 (3.75) Dia Max .110 (2.79) .392 (9.95)
.185 (4.7) .054 (1.38) .245 (6.22)
K .608 (15.42) Max
.040 (1.02)
A
K
A
.500 (12.7) Min
.100 (52.54)
.018 (0.48)
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