|
Details, datasheet, quote on part number:NTE6359
| |
| Part: | NTE6359 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | Silicon Power Rectifier Diode, 300 Amp. Anode to Case. Max Repetitive Peak Reverse Voltage 1000V. |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE6359 datasheet File size : 26 kB |
| Request For quote: | Find where to buy NTE6359
|
| |
Datasheet text preview:
NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp
Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in AnodetoCase or CathodetoCase Style Ratings and Characteristics: Average Forward Current (TC = +130°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A Maximum Repetitive Peak Reverse Voltage, VRRM NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Maximum NonRepetitive Peak Reverse Voltage, VRSM NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Repetitive Peak Reverse Current (TJ = +200°C), IRRM NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Maximum Forward Surge Current, IFSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5200A Fusing Current, I2t 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214000A2s 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195000A2s Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +180°C * Indicated AnodetoCase polarity, CathodetoCase polarity is standard.
Electrical Specifications:
Parameter Maximum Average Forward Current Maximum Peak OneCycle NonRepetitive Surge Current Symbol IF(AV) IFSM Test Conditions 180° sinusoidal condition, TC = +130°C Max t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2t for Fusing I2t t = 10ms t = 8.3ms Maximum I2t for Individual Device Fusing Maximum I2pt Maximum Value of Threshold Voltage Maximum Value of Forward Slope Resistance I2pt VM (TO) rt t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max Rating 300 5000 5200 3800 4000 214000 195000 151000 138000 2140000 0.610 0.751 Unit A A A A A A2s A2s A2s A2s A2pt V m
t = 0.1 to 10ms, no voltage reapplied TJ = +200°C TJ = +200°C
ThermalMechanical Specifications:
Parameter Maximum Operation Junction Temperature Maximum Storage Temperature Maximum Internal Thermal Resistance JunctiontoCase Thermal Resistance, CasetoSink Mounting Torque Symbol TJ Tstg RthJC RthCS T DC operation Mounting surface flat, smooth and greased Nonlubricated threads Test Conditions Rating 40 to + 180 55 to + 180 0.18 0.08 40.06 (360) Unit °C °C K/W K/W m·N (in·lb)
3.250 (82.55) Max .755 (19.2) Max .828 (21.03) Max
1.250 (31.75) Max
6.000 (152.4) Max
3/416 UNF2A Seating Plane
|
|
