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Part: NTE6401
Category:
Description: NTE6401, Unijunction Transistor
Company: NTE Electronics, Inc.
Datasheet: Download NTE6401 datasheet File size : 22 kB
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NTE6401 Unijunction Transistor
Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5µA (Max) D Low Emitter Reverse Current: .005µA (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to 125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Note 1 Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and BaseTwo) must be limited by the external circuitry. Note 2 Capacitor discharge 10µF or less, 30 volts or less Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Symbol Test Conditions VB2B1 = 10V, Note 3 VB2B1 = 3V, IE = 0 Min 0.56 4.7 0.1 Typ 7.0 Max 0.75 9.1 0.9 Unit k %/°C
rB B arBB
Note 3. Intrinsic standoff ratio, is defined by equation: = VP VF V B2B1 where VP = Peak Point Emitter Voltage VB2B1 = Interbase Voltage VF = Emitter to BaseOne Junction Diode Drop ( 0.45V @ 10µA)
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Emitter Saturation Voltage Modulated Interbase Current Emitter Reverse Current Peak Point Emitter Current Valley Point Current BaseOne Peak Pulse Voltage Symbol Test Conditions Min 4 3 Typ 3.5 15 0.005 1 6 5 Max 12 5 Unit V mA µA µA mA V VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4 IB2(mod) IEB20 IP IV VOB1 VB2B1 = 10V, IE = 50mA VB2E = 30V, IB1 = 0 VB2B1 = 25V VB2B1 = 20V, RB2 = 100
Note 4. Use pulse techniques: Pulse Width ~ 300µs, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
.230 (5.84) Dia Max .195 (4.95) Dia Max
.210 (5.33) Max
.030 (.762) Max
.500 (12.7) Min
.018 (0.45) Base 1 Emitter
45° Base 2/Case .041 (1.05)
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