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Details, datasheet, quote on part number:NTE6402
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Datasheet text preview:
NTE6402 Programmable Unijunction Transistor (PUT)
Description: The NTE6402 is a 3terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peakpoint emitter current, and valleypoint current to meet his particular needs. PUT's are specifically charactrized for long interval timers and other applications requiring low leakage and low peak point current. PUT's similar types have been characterized Applications: D SCR Trigger D Pulse and Timing Circuits D Oscillators D Sensing Circuits D Sweep Circits Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) GateCathode Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V GateCathode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GateAnode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V AnodeCathode Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V DC Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Peak Anode, Recurrent Forward Current Pulse Width = 100µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse Width = 20µs, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Anode, NonRecurrent Forward Current (10µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA Capacitive Discharge Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250µJ Total Average Power (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Ambient Temperature Range (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50° to +100°C Note 1. Derate currents and powers 1%/°C above 25°C. Note 2. E = 1/2 CV2 capacitor discharge energy with no current limiting.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Peak Current Offset Voltage Valley Current Symbol IP VT IV Test Conditions VS = 10V, RG = 1M VS = 10V, RG = 10k VS = 10V, RG = 1M VS = 10V, RG = 10k VS = 10V, RG = 1M VS = 10V, RG = 10k VS = 10V, RG = 200 Anode GateAnode Leakage Current GateCathode Leakage Current Forward Voltage Pulse Output Voltage Pulse Voltage Rate of Rise IGAO IGKS VF VO tr VS = 40V, TA = +25°C VS = 40V, TA = +75°C VS = 40V, AnodeCathode Short IF = 50mA Min 0.2 0.2 70 1.5 6 Typ Max 2 5 1.6 0.6 50 10 100 100 1.5 80 Unit µA µA V V µA µA mA nA nA nA V V ns
.135 (3.45) Min .210 (5.33) Max
.140 (3.55) Max
Seating Plane .245 (6.23) Max
.190 (4.82) Min .065 (1.65)
.500 (12.7) Min
.021 (.445) Dia Max
AGK .100 (2.54) .050 (1.27)
.500 (12.7) Min AGK .100 (2.54)
.018 (0.45) Dia Max
.105 (2.67) Max .205 (5.2) Max
.165 (4.2) Max .105 (2.67) Max .200 (5.08) Max
TO92
TO98
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