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Part: NTE65
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: NTE65, Silicon NPN Transistor High Voltage, Low Noise For Catv, Matv
Company: NTE Electronics, Inc.
Datasheet: Download NTE65 datasheet File size : 18 kB
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Datasheet text preview:
NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV
Description: The NTE65 is silicon NPN transistor designed primarily for use in highgain, lownoise, smallsignal amplifier and also used in applications requiring fast switching times. Features: D High CurrentGain Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +60°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW Derate Above 60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Thremal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain hFE VCE = 10V, IC = 14mA 25 250 V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 10V, IE = 0 15 20 3 50 V V V nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Dynamic Characteristics CurrentGain Bandwidth Product CollectorBase Capacitance Functional Tests Noise Figure NF VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz Power Gain at Optimum Noise Figure GNF Gmax VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz Maximum Available Power Gain (Note 1) VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz 2.4 3.0 15 10 18 12 dB dB dB dB dB dB fT Ccb VCE = 10V, IC = 14mA, f = 0.5GHz VCB = 10V, IE = 0, f = 1MHz 5.0 0.5 1.0 GHz pF Symbol Test Conditions Min Typ Max Unit
|S21|2 G max = Note 1. (I |S11|2) (I |S22|2)
.205 (5.2) Dia Max .039 (1.0)
.005 (0.15) .098 (2.5)
.197 (5.0)
Emitter .147 (3.75) Max
Collector
Base
.354 (9.0)
.197 5.0)
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