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Details, datasheet, quote on part number:NTE75
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Datasheet text preview:
NTE75 Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount)
Description: The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and similar high efficiency power switching applications. Features: D Fast Switching: tr, tf = 300ns (Max) D Low Saturation Voltage: 250mV max @ 1A Absolute Maximum Ratings: CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter CollectorBase Breakdown Voltage CollectorEmitter Breakdown Voltage EmitterBase Breakdown Voltage CollectorEmitter Cutoff Current Symbol Test Conditions Min 110 80 8 Typ Max 100 10 0.4 0.4 Unit V V V µA µA µA µA V(BR)CBO IC = 10µA V(BR)CEO IC = 100mA, Note 1 V(BR)EBO IE = 10µA ICEO ICEX CollectorBase Cutoff Current EmitterBase Cutoff Current ICBO IEBO VCE = 60V VCE = 110V, VEB = 500mV VCB = 80V VEB = 6V
Note 1. Pulse Width = 300µs, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter DC Current Gain (Note 1) Symbol hFE Test Conditions VCE = 5V, IC = 50mA VCE = 5V, IC = 1A VCE = 5V, IC = 1A, TA = 65°C VCE = 5V, IC = 5A Collector Saturation Voltage VCE(sat) VBE(sat) VBE(on) hFE fT Cob td tr ts tf IC = 1A, IB = 100mA, Note 1 IC = 5A, IB = 500mA, Note 1 Base Saturation Voltage Base ON Voltage AC Current Gain Current GainBandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time IC = 1A, IB = 100mA, Note 1 VCE = 2V, IC = 1A, Note 1 VCE = 5V, IC = 50mA, f = 1kHz VCE = 10V, IC = 1A, f = 10MHz VCE = 10V, IE = 0, f = 1MHz VCC = 20V, IC = 1A, IB1 = IB2 = 100mA, Pulse Width = 2µs, Duty Cycle 2%, Source Impedance = 50 Min 40 40 15 15 40 20 Typ Max 120 0.25 1.5 1.2 1.2 120 120 150 60 300 1.7 300 MHz pF ns ns µs ns V V V V Unit
Note 1. Pulse Width = 300µs, Duty Cycle 2%.
.190 (4.82) Dia
Base
.432 (10.95)
Emitter .347 (8.82) Dia
Collector/ Stud
.760 (19.3) Max .370 (9.39)
.115 (2.92) 1032 NF2A
.078 (1.97) Max
.420 (10.66)
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