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Details, datasheet, quote on part number:NTE784
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Datasheet text preview:
NTE784 Integrated Circuit WideBand Power Amplifier
Description: The NTE784 is a multistage, multipurpose, wideband power amplifier on a single monolithic silicon chip. This device employs a highly versitile and stable directcoupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment. The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB. Features: D High Power Output D Wide Frequency Range D High Power Gain D Single Power Supply for Class B Operation with Transformer D BuiltIn Temperature Tracking Voltage Regulator Provides Stable Operation Applications: D AF Power Amplifiers for Portable and Fixed Sound and Communications Systems D ServoControl Amplifier D WideBand Linear Mixers D Video Power Amplifiers D TransmissionLine Driver Amplifier (Balanced and Unbalanced) D FanIn and FanOut Amplifiers for Computer Logic Circuits D LampControl Amplifiers D MotorControl Amplifiers D Power Multivibrators D Power Switches Absolute Maximum Ratings: Power Dissipation (Without Heatsink, TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/°C Power Dissipation (With Heatsink, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter CollectorEmitter Breakdown Voltage Symbol V(BR)CER V(BR)CEO Idle Currents Peak Output Currents Cutoff Currents Differential Amplifier Current Drain Total Current Drain Differential Amplifier Input Pin Voltages Regulator Pin Voltage CollectorEmitter Cutoff Current EmitterBase Cutoff Current CollectorBase Cutoff Current Forward Current Transfer Ratio Bandwidth Maximum Power Output I4, I7 I4, I7 I4, I7 ICC1 ICC1 + ICC2 V2, V3 V11 ICEO IEBO ICBO hFE1 BW PO(max) Test Conditions (Q6 & Q7) IC = 10mA (Q1) IC = 0.1mA (Q6 & Q7) VCC1 =9V, VCC2 = 2V (Q6 & Q7) VCC1 =9V, VCC2 = 2V (Q6 & Q7) VCC1 =9V, VCC2 = 2V VCC1 = 9V, VCC2 = 9V VCC1 = 9V, VCC2 = 9V VCC1 = 9V, VCC2 = 2V VCC1 = 9V, VCC2 = 2V (Q) VCC1 = 10V (Q) VCC1 = 3V (Q) VCC1 = 3V (Q1) IC = 3mA, VCC1 = 6V VCC1 = 6V, VCC2 = 6V, 3dB VCC1 = 6V, VCC2 = 6V, RCC = 130 VCC1 = 9V, VCC2 = 9V, RCC = 130 VCC1 = 9V, VCC2 = 12V, RCC = 200 Sensitivity Input Resistance eIN RIN3 VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200 VCC1 = 6V, VCC2 = 6V, Pin3 to GND Min 25 10 180 6.3 14.5 30 200 400 800 Typ 5.5 9.4 21.5 11.1 2.35 75 8 300 550 1000 50 1000 Max 1.0 12.5 30.0 100 0.1 0.1 100 MHz mW mW mW mV Unit V V mA mA mA mA mA V V µA µA µA
Pin Connection Diagram (Top View)
Optional Bias Short to VCC 8 VCC 9 Buffer Amp Input 10 2.1V Bias Point 11 GND 12 1
6 Collector Output Q2 7 6 Emitter Output Q2 5 Emitter Output Q1 4 Collector Output Q 1
Buffer Amp Output
3 Differential Amp Input "A" 1 2 Differential Amp Input "B"
.370 (9.4) Dia Max .335 (8.5) Dia Max
.180 (4.57) Max
.500 (12.7) Min
.018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1
5 6 7
12 11 10 9
8
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