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Details, datasheet, quote on part number:NTE98
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| Part: | NTE98 |
| Category: | Discrete => Transistors => Bipolar => Darlington |
| Description: | NTE98, Silicon NPN Transistor HV Darlington Power Amp, Switch |
| Company: | NTE Electronics, Inc. |
| Datasheet: | Download NTE98 datasheet File size : 29 kB |
| Request For quote: | Find where to buy NTE98
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Datasheet text preview:
NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch
Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, highspeed, power switching in inductive circuits where falltime is critical. They are particularly suited for line operated switchmode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CollectorEmitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CollectorEmitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Vclamp = 500V VCEX(sus) Collector Cutoff Current ICEV ICER Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain hFE VCE(sat) VCE = 5V, IC = 5A VCE = 5V, IC = 10A CollectorEmitter Saturation Voltage IC = 10A, IB = 500mA IC = 10A, IB = 500mA, TC = +100°C IC = 20A, IB = 2A BaseEmitter Saturation Voltage VBE(sat) VF hfe Cob td tr ts tf tsv tc tsv tc IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +100°C ° IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +25°C ° IC = 10A, IB = 500mA IC = 10A, IB = 500mA, TC = +100°C Diode Forward Voltage Dynamic Characteristics SmallSignal Current Gain Output Capacitance VCE = 10V, IC = 1A, ftest = 1MHz VCB = 50V, IE = 0, ftest = 100kHz VCC = 250V, IC = 10A, IB1 = 500mA, VBE(off) = 5V, tp = 50µs, Duty Cycle 2% µ 8 100 325 pF µs µs µs µs µs µs µs µs IF = 5A, Note 3 40 30 3 400 300 2.0 2.5 3.5 2.5 2.5 5 V V V V V V IEBO IC = 2A, Vclamp = 500V, TC = +100°C IC = 5A, Vclamp = 500V, TC = +100°C VCEV = 700V, VBE(off) = 1.5V VCEV = 700V, VBE(off) = 1.5V, TC = +150°C VCE= 700V, RBE= 50, TC = +100°C VEB = 2V, IC = 0 500 500 375 0.25 5.0 5.0 175 V V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time 0.12 0.25 0.5 0.8 0.2 1.5 2.0 0.6
Switching Characteristics (Inductive Load, Clamped) Storage Time Crossover Time Storage Time Crossover Time 1.5 0.36 0.8 0.18 3.5 1.6
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle 2%. Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is comparable to that of typical fast recovery rectifiers.
C B
E
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case
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