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Details, datasheet, quote on part number:1N5908RL4
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Datasheet text preview:
1N5908
1500 Watt MosorbTM Zener Transient Voltage Suppressors
Unidirectional*
M o s o r b devices are designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor 's exclusive, cost-effective, highly reliable SurmeticTM axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features: http://onsemi.com
Cathode
Anode
· · · · ·
Working Peak Reverse Voltage Range 5 V Peak Power 1500 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V Response Time is Typically < 1 ns
AXIAL LEAD CASE 41A PLASTIC
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL 25°C Steady State Power Dissipation @ TL 75°C, Lead Length = 3/8 Derated above TL = 75°C Thermal Resistance, JunctiontoLead Forward Surge Current (Note 2.) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 50 Rq J L IFSM TJ, Tstg 20 200 65 to +175 Unit Watts
L 1N 5908 YYWW L = Assembly Location 1N5908 = JEDEC Device Code YY = Year WW = Work Week
ORDERING INFORMATION
Watts mW/°C °C/W Amps °C Device 1N5908 1N5908RL4 Package Axial Lead Axial Lead Shipping 500 Units/Box 1500/Tape & Reel
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. * Bidirectional device will not be available in this device
© Semiconductor Components Industries, LLC, 2002
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February, 2002 Rev. 3
Publication Order Number: 1N5908/D
1N5908
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I
UniDirectional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 53 A)
VRWM (Note 5.) (Volts) 5.0 Breakdown Voltage IR @ VRWM (µA) 300 VBR Min 6.0 (Note 6.) (Volts) Nom Max @ IT (mA) 1.0 @ IPP = 120 A 8.5 @ IPP = 60 A 8.0 @ IPP = 30 A 7.6 VC (Volts) (Note 7.)
Device (Note 4.) 1N5908
NOTES: 3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle. 4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option) 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltages in VBR are to be controlled. 7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data 1500 W at the beginning of this group
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1N5908
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA= 25° C 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C)
10
1
0.1 µs
1 µs
10 µs
100 µs tP, PULSE WIDTH
1 ms
10 ms
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 200 0 0 3/8 100 VALUE (%)
tr 10 µs PEAK VALUE - IPP
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.
HALF VALUE 50 tP 1 2
IPP 2
3 t, TIME (ms)
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Figure 3. Steady State Power Derating
Figure 4. Pulse Waveform
1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 10 µs 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms
1 ms 100 µs
Figure 5. Typical Derating Factor for Duty Cycle
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1N5908
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 6. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 7. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 5. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 5 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 5 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V
Vin (TRANSIENT) VL
V
OVERSHOOT DUE TO INDUCTIVE EFFECTS
Vin (TRANSIENT) VL
Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 6.
Figure 7.
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1N5908
CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a "CA" suffix; for example, 1.5KE18CA. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a "CA" suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title.
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