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Part: 1N5951BRL
Category:
Discrete
-> Diodes & Rectifiers
-> Zener Diodes
Description: Zener 120V 3.0W 5% , Package: Axial Lead, Pins=2
Company: ON Semiconductor
Datasheet: Download 1N5951BRL datasheet File size : 92 kB
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Datasheet text preview:
1N5913B Series
3 Watt DO-41 SurmeticE 30 Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. All this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions.
Specification Features:
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· · · · ·
Zener Voltage Range 3.3 V to 200 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 W @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 Watt Package
Cathode
Anode
Mechanical Characteristics: CASE: Void free, transfermolded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
AXIAL LEAD CASE 59 PLASTIC
230°C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Max. Steady State Power Dissipation @ TL = 75°C, Lead Length = 3/8 Derate above 75°C Steady State Power Dissipation @ TA = 50°C Derate above 50°C Operating and Storage Temperature Range Symbol PD Value 3 24 PD 1 6.67 TJ, Tstg 65 to +200 Unit W mW/°C W mW/°C °C
MARKING DIAGRAM
L 1N59 xxB YYWW
L 1N59xxB YY WW
= Assembly Location = Device Code = (See Table Next Page) = Year = Work Week
ORDERING INFORMATION
Device 1N59xxB 1N59xxBRL 1N59xxBRR1
{
Package Axial Lead Axial Lead Axial Lead Axial Lead
Shipping 2000 Units/Box 6000/Tape & Reel 2000/Tape & Reel 2000/Tape & Reel
1N59xxBRR2 }
{ }
Polarity band up with cathode lead off first Polarity band down with cathode lead off first
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
February, 2002 Rev. 2
Publication Order Number: 1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
(TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF IZM Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Maximum DC Zener Current VZ VR IR VF IZT V IF I
Zener Voltage Regulator
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2) Device (Note 1) 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B Device Marking 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B VZ (Volts) Min 3.14 4.47 5.32 5.89 6.46 7.79 8.65 9.50 10.45 11.40 Nom 3.3 4.7 5.6 6.2 6.8 8.2 9.1 10 11 12 Max 3.47 4.94 5.88 6.51 7.14 8.61 9.56 10.50 11.55 12.60 @ IZT mA 113.6 79.8 66.9 60.5 55.1 45.7 41.2 37.5 34.1 31.2 Zener Impedance (Note 3) ZZT @ IZT W 10 5 2 2 2.5 3.5 4 4.5 5.5 6.5 ZZK @ IZK W 500 500 250 200 200 400 500 500 550 550 mA 1 1 1 1 1 0.5 0.5 0.25 0.25 0.25 Leakage Current IR @ VR µA Max 100 5 5 5 5 5 5 5 1 1 Volts 1 1.5 3 4 5.2 6.5 7 8 8.4 9.1 IZM mA 454 319 267 241 220 182 164 150 136 125
1N5929B 1N5930B 1N5931B 1N5932B 1N5933B
1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5945B 1N5946B 1N5947B 1N5948B 1N5950B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B
1N5929B 1N5930B 1N5931B 1N5932B 1N5933B
1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5945B 1N5946B 1N5947B 1N5948B 1N5950B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B
14.25 15.20 17.10 19.00 20.90
22.80 25.65 28.50 31.35 34.20 40.85 44.65 48.45 53.20 58.90 64.60 71.25 77.90 86.45 104.5 114 123.5 142.5 152 171 190
15 16 18 20 22
24 27 30 33 36 43 47 51 56 62 68 75 82 91 110 120 130 150 160 180 200
15.75 16.80 18.90 21.00 23.10
25.20 28.35 31.50 34.65 37.80 45.15 49.35 53.55 58.80 65.10 71.40 78.75 86.10 95.55 115.5 126 136.5 157.5 168 189 210
25.0 23.4 20.8 18.7 17.0
15.6 13.9 12.5 11.4 10.4 8.7 8.0 7.3 6.7 6.0 5.5 5.0 4.6 4.1 3.4 3.1 2.9 2.5 2.3 2.1 1.9
9 10 12 14 17.5
19 23 28 33 38 53 67 70 86 100 120 140 160 200 300 380 450 600 700 900 1200
600 600 650 650 650
700 700 750 800 850 950 1000 1100 1300 1500 1700 2000 2500 3000 4000 4500 5000 6000 6500 7000 8000
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
1 1 1 1 1
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
11.4 12.2 13.7 15.2 16.7
18.2 20.6 22.8 25.1 27.4 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2 83.6 91.2 98.8 114 121.6 136.8 152
100 93 83 75 68
62 55 50 45 41 34 31 29 26 24 22 20 18 16 13 12 11 10 9 8 7
1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation device tolerance of ±5% are indicated by a "B" suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8 from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK.
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3
1N5913B Series
PD, STEADY STATE DISSIPATION (WATTS) 5 4 3 2 1 0 L = 3/8 L = 1/8
L = LEAD LENGTH TO HEAT SINK
L = 1
0
20
40
60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
JL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION TO LEAD (°C/W)
30 20 10 7 5 3 2 D =0.5 0.2 0.1 0.05 0.02 0.01 D=0 0.0005 0.001 0.002 0.005 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 PPK t2 DUTY CYCLE, D =t1/t2 t1
1 0.7 0.5
SINGLE PULSE TJL = JL (t)PPK REPETITIVE PULSES TJL = JL (t,D)PPK 0.5 1 2 5 10
0.3 0.0001 0.0002
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K PPK , PEAK SURGE POWER (WATTS) 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 1 23 5 10 PW, PULSE WIDTH (ms) 20 30 50 100 3 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 TA = 125°C
RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25°C PRIOR TO INITIAL PULSE
IR , REVERSE LEAKAGE (µ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE
TA = 125°C
0.002 0.001 0.0005 0.0003
1
2
5
10 20 50 100 NOMINAL VZ (VOLTS)
200
400
1000
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
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4
1N5913B Series
APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from:
TL = LA PD + TA
TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power.
TJL = JL PD
LA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally 3040°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + TJL
For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (TJ) may be estimated. Changes in voltage, VZ, can then be found from:
V = VZ TJ
VZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded.
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5
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