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Part: 1N6373D
Category:
Description:
Company: ON Semiconductor
Datasheet: Download 1N6373D datasheet File size : 75 kB
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1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power MosorbTM Zener Transient Voltage Suppressors
Unidirectional*
M o s o r b devices are designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor 's exclusive, cost-effective, highly reliable SurmeticTM axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
Cathode Anode
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AXIAL LEAD CASE 41A PLASTIC L MPTE xx 1N 63xx YYWW L ICTE xx YYWW L = Assembly Location MPTExx = ON Device Code ICTExx = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week
· · · · · ·
Working Peak Reverse Voltage Range 5 V to 45 V Peak Power 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V Response Time is Typically < 1 ns
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL 25°C Steady State Power Dissipation @ TL 75°C, Lead Length = 3/8 Derated above TL = 75°C Thermal Resistance, JunctiontoLead Forward Surge Current (Note 2.) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 20 Rq J L IFSM TJ, Tstg 20 200 65 to +175 Unit Watts Watts mW/°C °C/W Amps °C
ORDERING INFORMATION
Device MPTExx MPTExxRL4 ICTExx ICTExxRL4 1N63xx 1N63xxRL4* Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 500 Units/Box 1500/Tape & Reel 500 Units/Box 1500/Tape & Reel 500 Units/Box 1500/Tape & Reel
*Please see 1N6382 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C) for Bidirectional Devices
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *1N6378 Not Available in 1500/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
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June, 2002 Rev. 2
Publication Order Number: 1N6373/D
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Variation of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I
UniDirectional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
JEDEC Device (ON Device) 1N6373 (MPTE5) 1N6374 (MPTE8) 1N6375 (MPTE10) 1N6376 (MPTE12) 1N6377 (MPTE15) 1N6378* (MPTE18) 1N6379 (MPTE22) 1N6380 (MPTE36) 1N6381 (MPTE45) ICTE5 ICTE10 ICTE12 ICTE15 ICTE18 ICTE22 ICTE36 VRWM (Note 4.) (Volts) 5.0 8.0 10 12 15 18 22 36 45 5.0 10 12 15 18 22 36 IR @ VRWM (mA) 300 25 2.0 2.0 2.0 2.0 2.0 2.0 2.0 300 2.0 2.0 2.0 2.0 2.0 2.0 Breakdown Voltage VBR (Note Min 6.0 9.4 11.7 14.1 17.6 21.2 25.9 42.4 52.9 6.0 11.7 14.1 17.6 21.2 25.9 42.4 5.) (Volts) Max @ IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VC @ IPP (Note 6.) VC (Volts) 9.4 15 16.7 21.2 25 30 37.5 65.2 78.9 9.4 16.7 21.2 25 30 37.5 65.2 IPP (A) 160 100 90 70 60 50 40 23 19 160 90 70 60 50 40 23 VC (Volts) (Note 6.) @ IPP = 1A 7.1 11.3 13.7 16.1 20.1 24.2 29.8 50.6 63.3 7.1 13.7 16.1 20.1 24.2 29.8 50.6 @ IPP = 10 A 7.5 11.5 14.1 16.5 20.6 25.2 32 54.3 70 7.5 14.1 16.5 20.6 25.2 32 54.3 QVBR (mV/°C) 4.0 8.0 12 14 18 21 26 50 60 4.0 8.0 12 14 18 21 26
Device Marking 1N6373 MPTE5 1N6374 MPTE8 1N6375 MPTE10 1N6376 MPTE12 1N6377 MPTE15 1N6378* MPTE18 1N6379 MPTE22 1N6380 MPTE36 1N6381 MPTE45 ICTE5 ICTE10 ICTE12 ICTE15 ICTE18 ICTE22 ICTE36
Nom
NOTES: 3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle. 4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled. 6. Surge current waveform per Figure 5 and derate per Figures 1 and 2. *Not Available in the 1500/Tape & Reel
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1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C)
10
1
0.1 ms
1 ms
10 ms
100 ms
1 ms
10 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
10,000 MEASURED @ ZERO BIAS
C, CAPACITANCE (pF)
1000 MEASURED @ VRWM 100
10
1
10
100
1000
VBR, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8 IPP, VALUE (%) 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 200 0 0 3/8 100
tr 10 ms PEAK VALUE - IPP
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.
HALF VALUE 50 tP 1 2
IPP 2
3
4
t, TIME (ms)
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) TL = 25°C tP = 10 ms VBR(MIN) = 6.0 to 11.7 V 19 V 42.4 V 21.2 V 1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 180 V 120 V TL = 25°C tP = 10 ms
1.5KE6.8CA through 1.5KE200CA
VBR(NOM) = 6.8 to 13 V 20 V 24 V 43 V 75 V
Figure 6. Dynamic Impedance
1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 10 ms 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms
1 ms 100 ms
Figure 7. Typical Derating Factor for Duty Cycle
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1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V
Vin (TRANSIENT) VL
V
OVERSHOOT DUE TO INDUCTIVE EFFECTS
Vin (TRANSIENT) VL
Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
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