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Part: 1PMT16A
Category:
Discrete
-> TVS (Transient Transient Voltage Suppressors)
Description: Zener Transient Voltage Suppressor POWERMITE® Package
Company: ON Semiconductor
Datasheet: Download 1PMT16A datasheet File size : 116 kB
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Datasheet text preview:
1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE® Package
The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 5 - 58 V 200 W PEAK POWER
1 1: CATHODE 2: ANODE 2
· Stand-off Voltage: 5 - 58 V · Peak Power - 200 W @ 1 ms (1PMT5.0A - 1PMT36A) · · · · · · · · · · ·
- 175 W @ 1 ms (1PMT40A - 1PMT58A) Maximum Clamp Voltage @ Peak Pulse Current Low Leakage Response Time is Typically 16 kV) per Human Body Model Low Profile - Maximum Height of 1.1 mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint - Footprint Area of 8.45 mm2 POWERMITE is JEDEC Registered as DO-216AA Cathode Indicated by Polarity Band Pb-Free Package is Available
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POWERMITE CASE 457 PLASTIC 2
MARKING DIAGRAM
D 2 ANODE
1 CATHODE Mxx xx D
Mxx
= Specific Device Code = 5 - 58 = (See Table Next Page) = Date Code
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
LEAD ORIENTATION IN TAPE: Cathode (Short) Lead to Sprocket Holes ORDERING INFORMATION
Device 1PMT5.0AT1 1PMT5.0AT3 Package Shipping
readily solderable
MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POWERMITE 3,000/Tape & Reel POWERMITE 12,000/Tape & Reel
1PMT5.0AT3G POWERMITE 12,000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 - Rev. 7
Publication Order Number: 1PMT5.0AT3/D
1PMT5.0AT1/T3 Series
MAXIMUM RATINGS
Rating Maximum Ppk Dissipation, (PW-10/1000 ms) (Note 1) (1PMT5.0A - 1PMT36A) Maximum Ppk Dissipation, (PW-10/1000 ms) (Note 1) (1PMT40A - 1PMT58A) Maximum Ppk Dissipation, (PW-8/20 ms) (Note 1) DC Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C Thermal Resistance from Junction-to-Ambient Thermal Resistance from Junction-to-Lead (Anode) Maximum DC Power Dissipation (Note 3) Thermal Resistance from Junction to Tab (Cathode) Operating and Storage Temperature Range 1. Non-repetitive current pulse at TA = 25°C. 2. Mounted with recommended minimum pad size, DC board FR-4. 3. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 35 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V Symbol Ppk Ppk Ppk °PD° Rq J A Rq J a n o d e °PD° Rq J c a t h o d e TJ, Tstg Value 200 175 1000 500 4.0 248 35 3.2 23 -55 to +150 Unit W W W °mW mW/°C °C/W °C/W W °C/W °C
I IF
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
VRWM Device 1PMT5.0AT1, T3 1PMT7.0AT1, T3 1PMT12AT1, T3 1PMT16AT1, T3 1PMT18AT1, T3 1PMT22AT1, T3 1PMT24AT1, T3 1PMT26AT1, T3 1PMT28AT1, T3 1PMT30AT1, T3 1PMT33AT1, T3 1PMT36AT1, T3 1PMT40AT1, T3 1PMT48AT1, T3 1PMT51AT1, T3 1PMT58AT1, T3 Marking MKE MKM MLE MLP MLT MLX MLZ MME MMG MMK MMM MMP MMR MMX MMZ MNG (Note 5) 5.0 7.0 12 16 18 22 24 26 28 30 33 36 40 48 51 58 VBR @ IT (V) (Note 6) Min 6.4 7.78 13.3 17.8 20.0 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 53.3 56.7 64.4 Nom 6.7 8.2 14.0 18.75 21.0 25.6 28.1 30.4 32.8 35.1 38.7 42.1 46.8 56.1 59.7 67.8 Max 7.0 8.6 14.7 19.7 22.1 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 58.9 62.7 71.2 IT (mA) 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IR @ VRWM (mA) 800 500 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 VC @ IPP (V) 9.2 12 19.9 26 29.2 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 77.4 82.4 93.6 IPP (A) (Note 7) 21.7 16.7 10.1 7.7 6.8 5.6 5.1 4.8 4.4 4.1 3.8 3.4 2.7 2.3 2.1 1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at ambient temperature of 25°C. 7. Surge current waveform per Figure 2 and derate per Figure 4.
http://onsemi.com
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1PMT5.0AT1/T3 Series
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
10,000 tr PP, PEAK POWER (WATTS) 1000 100 VALUE (%) PEAK VALUE - IRSM
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 10 ms
100
50 tP
I HALF VALUE - RSM 2
10
1.0
10
100 tP, PULSE WIDTH (ms)
1000
10,000
0
0
1
2 t, TIME (ms)
3
4
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000 ms Pulse Waveform
100 90 % OF PEAK PULSE CURRENT 80 70 60 50 40 30 20 10 0 0
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A
tr
PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms
160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150
tP
20
40 t, TIME (ms)
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 3. 8 X 20 ms Pulse Waveform
Figure 4. Pulse Derating Curve
http://onsemi.com
3
1PMT5.0AT1/T3 Series
P D , MAXIMUM POWER DISSIPATION (W) 1 0.7 0.5 DERATING FACTOR 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 ms 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 100 ms PULSE WIDTH 10 ms 3.5 3 2.5 2 TL 1.5 1 0.5 0 25 50 75 100 125 150 175 T, TEMPERATURE (°C)
1 ms
D, DUTY CYCLE (%)
Figure 5. Typical Derating Factor for Duty Cycle
Figure 6. Steady State Power Derating
V F, TYPICAL FORWARD VOLTAGE (VOLTS)
1.2 1.0
10,000
C, CAPACITANCE (pF)
0.8 0.6 0.4 0.2 0 -55 25 85 150 T, TEMPERATURE (°C)
1000 MEASURED @ ZERO BIAS
100
MEASURED @ 50% VRWM
10 1 10 WORKING PEAK REVERSE VOLTAGE (VOLTS) 100
Figure 7. Forward Voltage
Figure 8. Capacitance versus Working Peak Reverse Voltage
http://onsemi.com
4
1PMT5.0AT1/T3 Series
OUTLINE DIMENSIONS
POWERMITE CASE 457-04 ISSUE D
-A-
C J S
F 0.08 (0.003)
M
TB
S
C
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF
TERM. 1
-B- K
TERM. 2
R L J H -T- 0.08 (0.003)
M
D TB
S
C
S
SOLDERING FOOTPRINT*
0.635 0.025 2.67 0.105 0.762 0.030
2.54 0.100
1.27 0.050
SCALE 10:1
POWERMITE)
m inches
m
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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Others parts begin by 1p
1P-1 1P-2 1P-3
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