Details, datasheet, quote on part number: 1SMA60CA
Part1SMA60CA
CategoryDiscrete => TVS (Transient Transient Voltage Suppressors)
DescriptionZener Transient Voltage Suppressors
CompanyON Semiconductor
DatasheetDownload 1SMA60CA datasheet
Cross ref.Similar parts: SMAJ60CA
Quote
Find where to buy
 
  

 

Features, Applications
1SMA10CAT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors

The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable SurmeticTM package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.

PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 400 W PEAK POWER

Working Peak Reverse Voltage Range 78 V Standard Zener Breakdown Voltage Range 91.3 V Peak Power - 400 Watts 1 ms ESD Rating of Class 3 16 kV) per Human Body Model Response Time is Typically 1 ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package Pb-Free Packages are Available

Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are

POLARITY: Cathode polarity notch does not indicate polarity MOUNTING POSITION: Any
xxC WW = Specific Device Code = (See Table Next Page) = Assembly Location = Year = Work Week
Device* 1SMAxxCAT3 1SMAxxCAT3G Package SMA (Pb-Free) Shipping 5000/Tape & Reel 5000/Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Individual devices are listed on page 3 of this data sheet.

Rating Peak Power Dissipation (Note = 25C, Pulse Width ms DC Power Dissipation = 75C Measured Zero Lead Length (Note 2) Derate Above 75C Thermal Resistance from Junction-to-Lead DC Power Dissipation (Note = 25C Derate Above 25C Thermal Resistance from Junction-to-Ambient Operating and Storage Temperature Range Symbol PPK PD Value to +150 Unit W mW/C C/W W mW/C C/W C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. X 1000 ms, non-repetitive 2. 1 square copper pad, FR-4 board 3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see to 1SMA78AT3 for Unidirectional devices.

(TA = 25C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP IT VC VBR VRWM IR VRWM VBR IT I IPP

4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level 5. VBR measured at pulse test current at an ambient temperature 25C 6. Surge current waveform per Figure 2 and derate per Figure 3 * The "G" suffix indicates Pb-Free package available.


 

Related products with the same datasheet
1SMA60CAT3
Some Part number from the same manufacture ON Semiconductor
1SMA60CAT3 Zener Transient Voltage Suppressors
1SMA60CAT3 Zener Transient Voltage Suppressors , Package: Sma, Pins=2
1SMA64A Zener Transient Voltage Suppressors
1SMA64A 400W Zener Suppressor
1SMA64AT3 Zener Sma Transient Voltage Suppressor 400W 11V TR, Package: Sma, Pins=2
1SMA64CA Zener Transient Voltage Suppressors
1SMA64CA
1SMA64CAT3 Zener Transient Voltage Suppressors , Package: Sma, Pins=2
1SMA7.0A Zener Transient Voltage Suppressors
1SMA7.0A 400W Zener Suppressor
1SMA7.0AT3 400W Zener Suppressor , Package: Sma, Pins=2
1SMA7.5A 400W Zener Suppressor
1SMA7.5AT3 400W Zener Suppressor , Package: Sma, Pins=2
1SMA70A Zener Transient Voltage Suppressors
1SMA70A 400W Zener Suppressor
1SMA70AT3 400W Zener Suppressor , Package: Sma, Pins=2
1SMA70CA Zener Transient Voltage Suppressors
1SMA70CA
1SMA70CAT3 Zener Transient Voltage Suppressors , Package: Sma, Pins=2
1SMA75A Zener Transient Voltage Suppressors
1SMA75A 400W Zener Suppressor
Same catergory

1N4383 : . 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com .

APT6013JLL : 600V, 39A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

BUY11 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 20V ;; IC(cont) = 0.9A ;; HFE(min) = 40 ;; HFE(max) = 100 ;; @ Vce/ic = V / 100mA ;; FT = 140MHz ;; PD = 75W.

DKR300AB60 : Fast Recovery Diodes. is a high speed (fast recovery) dual diode module designed for high power switching application. DKR300AB60 is suitable for high frequency application requiring low loss and high speed control. High Speed Diode trr 200ns IF(AV)=150A each device Isolated Molded devices High Surge Capability Applications Switching Power Supply, Inverter Welding Power.

EH1 : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

FEPF16JT : Fast Efficient Plastic Rectifier. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive centertap Glass passivated chip junctions Low power loss Low forward voltage, high current capability High surge current capability Superfast recovery times for high efficiency High temperature soldering guaranteed: 0.25" (6.35mm) from.

KDR378 : = Schottky Barrier Diode ;; Package = Usm.

MJD340 : High Voltage Power Transistor , Package: Dpak, Pins=3. Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("1" Suffix) Lead Formed Version 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular MJE340 and 300 V (Min).

SI2302DS : SI2302DS; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3).

AAT7357 : 20V P-Channel Power MOSFET The AAT7357 is a low threshold dual MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechs ultra-high density MOSFET process and space-saving small outline J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package..

IXTQ62N15P : Polar N-channel MOSFETs International standard packages 􀁺 Unclamped Inductive Switching (UIS) rated 􀁺 Low package inductance - easy to drive and to protect.

LR0204 : RESISTOR, METAL FILM, 0.25 W, 1 %, 100 ppm, 1 ohm - 1000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

NGB8202ANT4G : 20 A, 440 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: LEAD FREE, CASE 418B-04, D2PAK-3 ; Number of units in IC: 1.

RB71CE10000A : RESISTOR, WIRE WOUND, 0.125 W, 10 ppm, 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 1000 ohms ; Temperature Coefficient: 10 ±ppm/°C ; Power Rating: 0.1250 watts (1.68E-4 HP) ; Operating DC Voltage: 300 volts.

SNMPW02470S9D2KS00 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 3000 V, 0.047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.0470 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 3000 volts ; Mounting Style: Through Hole.

UFT40130A : 200 A, 300 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 200000 mA ; Package: ROHS COMPLIANT PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 2.

WB0402T1.9SK : 1 ELEMENT, 1.9 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 1.9 microH ; Rated DC Current: 1040 milliamps ; Operating Temperature:.

126SPC200 : 120 A, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: SPD-3, 2 PIN ; Number of Diodes: 1 ; IF: 120000 mA.

1C4004 : 1 A, SILICON, SIGNAL DIODE. s: Package: DIE-2 ; Number of Diodes: 1 ; IF: 1000 mA.

 
0-C     D-L     M-R     S-Z