Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:


Part: 1SMB51AT3

Category:
 Discrete
   -> TVS (Transient Transient Voltage Suppressors)

Description: 600W Zener , Package: Smb, Pins=2

Company: ON Semiconductor

Datasheet: Download 1SMB51AT3 datasheet     File size : 35 kB

Request For quote: Find where to buy 1SMB51AT3



Datasheet text preview:
1SMB5.0AT3 Series
600 Watt Peak Power Zener Transient Voltage Suppressors
Unidirectional*
T h e SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable SurmeticTM package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com

· · · · · · · ·

PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.0­170 VOLTS 600 WATT PEAK POWER

Working Peak Reverse Voltage Range ­ 5.0 V to 170 V Standard Zener Breakdown Voltage Range ­ 6.7 V to 199 V Peak Power ­ 600 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns

Cathode

Anode

Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are

SMB CASE 403A PLASTIC

readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM
YWW xx Y WW xx = Year = Work Week = Specific Device Code = (See Table Page 3)

260°C for 10 Seconds
LEADS: Modified L­Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS
Please See the Table on the Following Page

ORDERING INFORMATION
*Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices. Device { 1SMBxxxAT3 Package SMB Shipping 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

The "T3" suffix refers to a 13 inch reel.

© Semiconductor Components Industries, LLC, 2001

1

May, 2001 ­ Rev. 4

Publication Order Number: 1SMB5.0AT3/D

1SMB5.0AT3 Series
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2.) Derate Above 75°C Thermal Resistance from Junction to Lead DC Power Dissipation (Note 3.) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to Ambient Forward Surge Current (Note 4.) @ TA = 25°C Operating and Storage Temperature Range 1. 2. 3. 4. Symbol PPK PD Value 600 3.0 40 25 0.55 4.4 226 100 ­65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W A °C

Rq J L PD Rq J A IFSM TJ, Tstg

10 X 1000 ms, non­repetitive 1 square copper pad, FR­4 board FR­4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5.) = 30 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF VC VBR VRWM IF

I

IR VF IT

V

IPP

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non­repetitive duty cycle.

Uni­Directional TVS

http://onsemi.com
2

1SMB5.0AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VRWM (Note 6.) Volts Breakdown Voltage IR @ VRWM µA VBR (Note 7.) Volts Min Nom Max @ IT mA VC @ IPP (Note 8.) VC Volts IPP Amps

Device

Device Marking

1SMB5.0AT3 1SMB6.0AT3 1SMB6.5AT3 1SMB7.0AT3
1SMB7.5AT3 1SMB8.0AT3 1SMB8.5AT3 1SMB9.0AT3 1SMB10AT3 1SMB11AT3 1SMB12AT3 1SMB13AT3 1SMB14AT3 1SMB15AT3 1SMB16AT3 1SMB17AT3 1SMB18AT3 1SMB20AT3 1SMB22AT3 1SMB24AT3 1SMB26AT3 1SMB28AT3 1SMB30AT3 1SMB33AT3 1SMB36AT3 1SMB40AT3 1SMB43AT3 1SMB45AT3 1SMB48AT3 1SMB51AT3 1SMB54AT3 1SMB58AT3 1SMB60AT3 1SMB64AT3 1SMB70AT3 1SMB75AT3 1SMB78AT3 1SMB85AT3 1SMB90AT3 1SMB100AT3 1SMB110AT3 1SMB120AT3 1SMB130AT3 1SMB150AT3 1SMB160AT3 1SMB170AT3

KE KG KK KM
KP KR KT KV KX KZ LE LG LK LM LP LR LT LV LX LZ ME MG MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR

5.0 6.0 6.5 7.0
7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170

800 800 500 500
100 50 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0

6.40 6.67 7.22 7.78
8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189

6.7 7.02 7.6 8.19
8.77 9.36 9.92 10.55 11.7 12.85 14 15.15 16.4 17.6 18.75 19.9 21.05 23.35 25.65 28.1 30.4 32.75 35.05 38.65 42.1 46.75 50.3 52.65 56.1 59.7 63.15 67.8 70.2 74.85 81.9 87.7 91.25 99.2 105.5 117 128.5 140 151.5 176 187.5 199

7.0 7.37 7.98 8.6
9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86 92.1 95.8 104 111 123 135 147 159 185 197 209

10 10 10 10
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

9.2 10.3 11.2 12.0
12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275

65.2 58.3 53.6 50.0
46.5 44.1 41.7 39.0 35.3 33.0 30.2 27.9 25.8 24.0 23.1 21.7 20.5 18.5 16.9 15.4 14.2 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.7 7.3 6.9 6.4 6.2 5.8 5.3 4.9 4.7 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2

6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data ­ 600 W at the beginning of this group.

http://onsemi.com
3

1SMB5.0AT3 Series
100 PPK, PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 10 tr 10 µs 100 VALUE (%) PEAK VALUE - IPP IPP 2 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.

HALF VALUE 50 tP

1

0.1

0.1 µs

1 µs

10 µs

100 µs

1 ms

10 ms

0

0

1

2 t, TIME (ms)

3

4

tP, PULSE WIDTH

Figure 1. Pulse Rating Curve
160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Vin

Figure 2. Pulse Waveform

TYPICAL PROTECTION CIRCUIT
Zin

LOAD

VL

TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

C, CAPACITANCE (pF)

10,000 MEASURED @ ZERO BIAS 1000 MEASURED @ VRWM 100

10 0.1 1 10 100 VBR, BREAKDOWN VOLTAGE (VOLTS) 1000

Figure 4. Capacitance versus Breakdown Voltage

http://onsemi.com
4

1SMB5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME

In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 5. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,

minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.

http://onsemi.com
5




Others parts begin by 1s
1S-1   1S-2   1S-3   1S-4   1S-5   1S-6   1S-7   1S-8   1S-9   1S-10