|
Details, datasheet, quote on part number:1SMB54CAT3
| |
| Part: | 1SMB54CAT3 |
| Category: | Discrete => TVS (Transient Transient Voltage Suppressors) |
| Description: | Zener SMB Transient Voltage Suppressor Clipper 600W 54V, Package: Smb, Pins=2 |
| Company: | ON Semiconductor |
| Datasheet: | Download 1SMB54CAT3 datasheet File size : 57 kB |
| Request For quote: | Find where to buy 1SMB54CAT3
|
| |
Datasheet text preview:
1SMB10CAT3 Series
600 Watt Peak Power Zener Transient Voltage Suppressors
Bidirectional*
T h e SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 1078 VOLTS 600 WATT PEAK POWER
· · · · · · · ·
Working Peak Reverse Voltage Range 10 V to 78 V Standard Zener Breakdown Voltage Range 11.7 V to 91.3 V Peak Power 600 Watts @ 1 ms ESD Rating of Class 3 (> 16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns
SMB CASE 403A PLASTIC
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
YWW xxC Y WW xxC = Year = Work Week = Specific Device Code = (See Table Next Page)
260°C for 10 Seconds
LEADS: Modified LBend providing more contact area to bond pads POLARITY: Polarity band will not be indicated MOUNTING POSITION: Any MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2.) Derate Above 75°C Thermal Resistance from Junction to Lead DC Power Dissipation (Note 3.) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Symbol PPK PD Value 600 3.0 40 25 0.55 4.4 226 65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W °C
ORDERING INFORMATION
Device { 1SMBxxCAT3 Package SMB Shipping 2500/Tape & Reel
Rq J L PD
Rq J A TJ, Tstg
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
The "T3" suffix refers to a 13 inch reel.
1. 10 X 1000 ms, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. *Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 Rev. 4
Publication Order Number: 1SMB10CAT3/D
1SMB10CAT3 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP IT VC VBR VRWM IR IR VRWM VBR VC IT V IPP I
BiDirectional TVS
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VRWM (Note 4.) Volts 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 Breakdown Voltage IR @ VRWM µA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 VBR (Note 5.) Volts Min 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 Nom 11.69 12.84 14.00 15.16 16.42 17.58 18.74 19.90 21.06 23.37 25.69 28.11 30.42 32.74 35.06 38.63 42.11 46.74 50.32 52.63 56.11 59.69 63.16 67.79 70.21 74.84 81.90 91.65 91.26 Max 12.27 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 27.0 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.32 71.18 73.72 78.58 85.99 92.07 95.83 @ IT mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VC @ IPP (Note 6.) VC Volts 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.2 77.4 82.4 87.1 93.6 96.8 103 113 121 126 IPP Amps 35.3 33.0 30.2 27.9 25.8 24.0 23.1 21.7 20.5 18.5 16.9 15.4 14.2 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.7 7.3 6.9 6.4 6.2 5.8 5.3 4.9 4.7
Device 1SMB10CAT3 1SMB11CAT3 1SMB12CAT3 1SMB13CAT3 1SMB14CAT3 1SMB15CAT3 1SMB16CAT3 1SMB17CAT3 1SMB18CAT3 1SMB20CAT3 1SMB22CAT3 1SMB24CAT3 1SMB26CAT3 1SMB28CAT3 1SMB30CAT3 1SMB33CAT3 1SMB36CAT3 1SMB40CAT3 1SMB43CAT3 1SMB45CAT3 1SMB48CAT3 1SMB51CAT3 1SMB54CAT3 1SMB58CAT3 1SMB60CAT3 1SMB64CAT3 1SMB70CAT3 1SMB75CAT3 1SMB78CAT3
Device Marking KXC KZC LEC LGC LKC LMC LPC LRC LTC LVC LXC LZC MEC MGC MKC MMC MPC MRC MTC MVC MXC MZC NEC NGC NKC NMC NPC NRC NTC
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 5. VBR measured at pulse test current IT at an ambient temperature of 25°C. 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group.
http://onsemi.com
2
1SMB10CAT3 Series
100 PPK, PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 10 tr 10 µs 100 VALUE (%) PEAK VALUE - IPP IPP 2 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.
HALF VALUE 50 tP
1
0.1
0.1 µs
1 µs
10 µs
100 µs
1 ms
10 ms
0
0
1
2 t, TIME (ms)
3
4
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Vin
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
VL
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Pulse Derating Curve
http://onsemi.com
3
1SMB10CAT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 5. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
http://onsemi.com
4
1SMB10CAT3 Series
OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL
V
Vin (TRANSIENT)
V
Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t
t
Figure 4.
Figure 5.
1 0.7 0.5 DERATING FACTOR 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 µs 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 100 µs PULSE WIDTH 10 ms
1 ms
Figure 6. Typical Derating Factor for Duty Cycle
UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.
http://onsemi.com
5
|
|
