|
Details, datasheet, quote on part number:1.5SMC15AT3
| |
Datasheet text preview:
1.5SMC6.8AT3 Series
1500 Watt Peak Power Zener Transient Voltage Suppressors
Unidirectional*
T h e SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMC series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable SurmeticTM package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com
· · · · · · · · ·
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.878 VOLTS 1500 WATT PEAK POWER
Working Peak Reverse Voltage Range 5.8 to 77.8 V Standard Zener Breakdown Voltage Range 6.8 to 91 V Peak Power 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V UL 497B for Isolated Loop Circuit Protection Maximum Temperature Coefficient Specified Response Time is Typically < 1 ns
Cathode
Anode
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
SMC CASE 403 PLASTIC
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
YWW xxxA Y WW xxxA = Year = Work Week = Specific Device Code = (See Table on Page 3)
260°C for 10 Seconds
LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by molded polarity notch MOUNTING POSITION: Any MAXIMUM RATINGS
Please See the Table on the Following Page
ORDERING INFORMATION
Device { 1.5SMCxxxAT3 Package SMC Shipping 2500/Tape & Reel
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
*Bidirectional devices will not be available in this series. The "T3" suffix refers to a 13 inch reel.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 Rev. 4
Publication Order Number: 1.5SMC6.8AT3/D
1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2.) Derate Above 75°C Thermal Resistance from Junction to Lead DC Power Dissipation (Note 3.) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to Ambient Forward Surge Current (Note 4.) @ TA = 25°C Operating and Storage Temperature Range 1. 2. 3. 4. Symbol PPK PD Value 1500 4.0 54.6 18.3 0.75 6.1 165 200 65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W A °C
Rq J L PD Rq J A IFSM TJ, Tstg
10 X 1000 ms, nonrepetitive 1 square copper pad, FR4 board FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note ) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF VC VBR VRWM IF
I
IR VF IT
V
IPP
UniDirectional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms nonrepetitive duty cycle
http://onsemi.com
2
1.5SMC6.8AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VRWM (Note 6.) Volts 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 Breakdown Voltage IR @ VRWM µA 1000 500 200 50 10 5 5 5 VBR Volts (Note 7.) Min 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 Nom 6.8 7.5 8.2 9.1 10 11 12 13 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 @ IT mA 10 10 10 1 1 1 1 1 VC @ IPP (Note 8.) VC Volts 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 IPP Amps 143 132 124 112 103 96 90 82 QVBR %/°C 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081
Device 1.5SMC6.8AT3 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMC9.1AT3 1.5SMC10AT3 1.5SMC11AT3 1.5SMC12AT3 1.5SMC13AT3
Device Marking 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A
1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3
1.5SMC22AT3 1.5SMC24AT3 1.5SMC27AT3 1.5SMC30AT3
15A 16A 18A 20A
22A 24A 27A 30A
12.8 13.6 15.3 17.1
18.8 20.5 23.1 25.6
5 5 5 5
5 5 5 5
14.3 15.2 17.1 19
20.9 22.8 25.7 28.5
15 16 18 20
22 24 27 30
15.8 16.8 18.9 21
23.1 25.2 28.4 31.5
1 1 1 1
1 1 1 1
21.2 22.5 25.2 27.7
30.6 33.2 37.5 41.4
71 67 59.5 54
49 45 40 36
0.084 0.086 0.088 0.09
0.092 0.094 0.096 0.097
1.5SMC33AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC51AT3 1.5SMC56AT3 1.5SMC62AT3
1.5SMC68AT3 1.5SMC75AT3 1.5SMC82AT3 1.5SMC91AT3
33A 36A 39A 43A 47A 51A 56A 62A
68A 75A 82A 91A
28.2 30.8 33.3 36.8 40.2 43.6 47.8 53
58.1 64.1 70.1 77.8
5 5 5 5 5 5 5 5
5 5 5 5
31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9
64.6 71.3 77.9 86.5
33 36 39 43 47 51 56 62
68 75 82 91
34.7 37.8 41 45.2 49.4 53.6 58.8 65.1
71.4 78.8 86.1 95.5
1 1 1 1 1 1 1 1
1 1 1 1
45.7 49.9 53.9 59.3 64.8 70.1 77 85
92 103 113 125
33 30 28 25.3 23.2 21.4 19.5 17.7
16.3 14.6 13.3 12
0.098 0.099 0.1 0.101 0.101 0.102 0.103 0.104
0.104 0.105 0.105 0.106
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 1500 Watt at the beginning of this group.
http://onsemi.com
3
1.5SMC6.8AT3 Series
100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 tr 10 µs 100 VALUE (%) PEAK VALUE - IPP IPP 2 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.
Ppk, PEAK POWER (kW)
10
HALF VALUE 50 tP
1
0.1 µs
1 µs
10 µs
100 µs tP, PULSE WIDTH
1 ms
10 ms
0
0
1
2 t, TIME (ms)
3
4
Figure 1. Pulse Rating Curve
160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 1000 IT, TEST CURRENT (AMPS) 500 200 100 50 20 10 5 2 1 0.3 TL = 25°C tP = 10 µs
Figure 2. Pulse Waveform
VBR (NOM) = 6.8 TO 13 V 20 V 43 V 24 V 75 V 120 V 180 V
0.5 0.7 1
2
3
5
7
10
20
30
TA, AMBIENT TEMPERATURE (°C)
VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR (NOM) (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Dynamic Impedance
UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.
http://onsemi.com
4
1.5SMC6.8AT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 5. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMC series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
http://onsemi.com
5
|
|