Details, datasheet, quote on part number: 2N3771
Part2N3771
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionPower 30A 40V Discrete NPN , Package: TO-204 (TO-3), Pins=2
CompanyON Semiconductor
DatasheetDownload 2N3771 datasheet
Cross ref.Similar parts: 2N377, 2N5301, 2N5302
Quote
Find where to buy
 
  

 

Features, Applications

. designed for linear amplifiers, series pass regulators, and inductive switching applications.
Forward Biased Second Breakdown Current Capability
20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS
Collector­Emitter Voltage Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage
Collector Current Continuous Peak Base Current Continuous Peak
Total Device Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Symbol Min Max Unit *Collector­Emitter Sustaining Voltage (1) (IC = 0.2 Adc, 2N3771 2N3772 VCEO(sus) VCEX(sus) Vdc Collector­Emitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms) Collector­Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector Cutoff Current (VCE = 30 Vdc, = 0) (VCE = 50 Vdc, = 0) (VCE = 25 Vdc, 2N3771 2N3772 VCER(sus) ICEO mAdc 2N3772 10 *Collector Cutoff Current (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, = 150_C) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc, = 150_C) ICEV mAdc 2N3771 2N3772 *Collector Cutoff Current (VCB = 50 Vdc, = 0) (VCB = 100 Vdc, = 0) *Emitter Cutoff Current (VBE = 5.0 Vdc, = 0) (VBE = 7.0 Vdc, = 0) ICBO mAdc 2N3771 2N3772 IEBO mAdc 2N3771 2N3772 *ON CHARACTERISTICS DC Current Gain (1) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) hFE 2N3771 2N3772 Collector­Emitter Saturation Voltage (IC = 15 Adc, = 1.5 Adc) (IC = 10 Adc, = 1.0 Adc) (IC = 30 Adc, = 6.0 Adc) (IC = 20 Adc, = 4.0 Adc) Base­Emitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) VCE(sat) Vdc 2N3771 2N3772 VBE(on) Vdc 2.7 2.2 *DYNAMIC CHARACTERISTICS Current­Gain Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz) Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, = 1.0 kHz) 0.2 40 MHz hfe SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, 1.0 s (non­repetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc) IS/b Adc 3.75 2.5 *Indicates JEDEC Registered Data. (1) Pulse Test: 300 µs, Rep. Rate 60 cps.

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D SINGLE PULSE 0.05 0.01 P(pk) JC(t) = r(t) = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME t1 t2 TJ(pk) TC = P(pk) JC(t) DUTY CYCLE, t1/t2 t, TIME (ms)

1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY ms 2N3771 FOR ALL DEVICES 2N3772 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max).

RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE mA MSD6100 USED BELOW 100 mA


 

Related products with the same datasheet
2N3772
Some Part number from the same manufacture ON Semiconductor
2N3772 Power 30A 40V Discrete NPN , Package: TO-204 (TO-3), Pins=2
2N3773 Power 16A 140V Discrete NPN , Package: TO-204 (TO-3), Pins=2
2N3819 Small Signal TO92 JFET N Channel 25V, Package: TO-92 (TO-226), Pins=3
2N3903 General Purpose Transistors , Package: TO-92 (TO-226), Pins=3
2N3903RLRM General Purpose Transistor Npn, Package: TO-92 (TO-226), Pins=3
2N3904 General Purpose Transistors , Package: TO-92 (TO-226), Pins=3
2N3905 General Purpose PNP Silicon
2N3906 Small Signal General Purpose PNP , Package: TO-92 (TO-226), Pins=3
2N3906RLRE General Purpose Transistor Pnp, Package: TO-92 (TO-226), Pins=3
2N3906RLRM Small Signal General Purpose PNP , Package: TO-92 (TO-226), Pins=3
2N4123 General Purpose Transistors , Package: TO-92 (TO-226), Pins=3
2N4123RLRA General Purpose Transistor Npn, Package: TO-92 (TO-226), Pins=3
2N4123RLRM General Purpose Transistors , Package: TO-92 (TO-226), Pins=3
2N4264 General Purpose Transistor
2N4400 General Purpose NPN Silicon
2N4401 Small Signal General Purpose NPN , Package: TO-92 (TO-226), Pins=3
2N4401ZL1 General Purpose Transistor Npn, Package: TO-92 (TO-226), Pins=3
2N4402 General Purpose PNP Silicon
2N4403 General Purpose Transistors, PNP Silicon , Package: TO-92 (TO-226), Pins=3
2N4410 Small Signal Amplifier NPN , Package: TO-92 (TO-226), Pins=3
2N4918 Medium-power Plastic PNP Silicon Transistors , Package: TO-225, Pins=3
Same catergory

2SD1753 : Silicon NPN Triple Diffusion Planar Type ( For Power Amplification With High Forward Current Transfer Ratio ).

3LP01N : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage.

BUX67C : Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 350V ;; IC(cont) = 2A ;; HFE(min) = 15 ;; HFE(max) = 150 ;; @ Vce/ic = 5V / 1A ;; FT = 20MHz ;; PD = 35W.

KSC2734 : NPN ( Mixer, Osc. For UHF TV Tuner ).

MTP4N40E : Obsolete, no on Replacement Part Available, Package: TO-220, Pins=3. TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage­blocking capability without degrading performance over time. In addition, this advanced TMOS E­FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design.

PDTC143ZT : SOT/Surface Mount. NPN Resistor-equipped Transistor. Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 k respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. NPN resistor-equipped transistor a SOT23 plastic package.

SA8V5A : 500 Watt Transient Voltage Suppressors. Glass passivated junction. 500W Peak Pulse Power capability on Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND.

APM3015NFC-TUG : 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0150 ohms ; Package Type: TO-220, GREEN, TO-220, 3 PIN ; Number of units in IC: 1.

BC303-4E1 : 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: PNP ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

BD1722N5050A00 : 1700 MHz - 2200 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -55 to 85 C (-67 to 185 F) ; Standards: RoHS.

KNP1/2W-100JB : RESISTOR, WIRE WOUND, 0.5 W, 5 %, 400 ppm, 10 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 400 Ā±ppm/Ā°C ; Power Rating: 0.5000 watts (6.70E-4.

MCL5269A-TP : 87 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

RB06 : RESISTOR, THIN FILM, 0.1 W, 0.1; 0.25; 0.5; 1 %, 10; 25; 50 ppm, 1 ohm - 390000 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, LEAD FREE ; Operating DC Voltage: 75 volts ; Operating Temperature: -55 to 125 C (-67.

SQZR56K8J : RESISTOR, METAL OXIDE FILM, 5 W, 5 %, 300 ppm, 6800 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 6800 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 Ā±ppm/Ā°C ; Power Rating: 5 watts.

T-1378G : PULSE TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer.

TRT : RESISTOR, POTENTIOMETER, WIRE WOUND, 1 TURN(S), 22 ohm - 20000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Technology / Construction: Wirewound ; Mounting / Packaging: Panel Mount (Bushing), LEAD FREE.

TV5001 : PULSE TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers.

106AFX010M : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 10 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 2 microamps ; ESR: 150 milliohms ; Mounting Style: Through Hole ; Operating.

550-3710-01-02-00 : 1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 47 microH ; Rated DC Current: 195 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

 
0-C     D-L     M-R     S-Z