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Details, datasheet, quote on part number: 2N3772
 
 
Part number2N3772
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionPower 30A 40V Discrete NPN , Package: TO-204 (TO-3), Pins=2
CompanyON Semiconductor
DatasheetDownload 2N3772 datasheet
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Specifications, Features, Applications

. designed for linear amplifiers, series pass regulators, and inductive switching applications.
· Forward Biased Second Breakdown Current Capability
20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS
Collector­Emitter Voltage Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage
Collector Current Continuous Peak Base Current Continuous Peak
Total Device Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Symbol Min Max Unit *Collector­Emitter Sustaining Voltage (1) (IC = 0.2 Adc, 2N3771 2N3772 VCEO(sus) VCEX(sus) Vdc Collector­Emitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms) Collector­Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector Cutoff Current (VCE = 30 Vdc, = 0) (VCE = 50 Vdc, = 0) (VCE = 25 Vdc, 2N3771 2N3772 VCER(sus) ICEO mAdc 2N3772 10 *Collector Cutoff Current (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, = 150_C) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc, = 150_C) ICEV mAdc 2N3771 2N3772 *Collector Cutoff Current (VCB = 50 Vdc, = 0) (VCB = 100 Vdc, = 0) *Emitter Cutoff Current (VBE = 5.0 Vdc, = 0) (VBE = 7.0 Vdc, = 0) ICBO mAdc 2N3771 2N3772 IEBO mAdc 2N3771 2N3772 *ON CHARACTERISTICS DC Current Gain (1) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) hFE 2N3771 2N3772 Collector­Emitter Saturation Voltage (IC = 15 Adc, = 1.5 Adc) (IC = 10 Adc, = 1.0 Adc) (IC = 30 Adc, = 6.0 Adc) (IC = 20 Adc, = 4.0 Adc) Base­Emitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) VCE(sat) Vdc 2N3771 2N3772 VBE(on) Vdc 2.7 2.2 *DYNAMIC CHARACTERISTICS Current­Gain Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz) Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, = 1.0 kHz) 0.2 40 MHz hfe SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, 1.0 s (non­repetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc) IS/b Adc 3.75 2.5 *Indicates JEDEC Registered Data. (1) Pulse Test: 300 µs, Rep. Rate 60 cps.

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D SINGLE PULSE 0.05 0.01 P(pk) JC(t) = r(t) = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME t1 t2 TJ(pk) TC = P(pk) JC(t) DUTY CYCLE, t1/t2 t, TIME (ms)

1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY ms 2N3771 FOR ALL DEVICES 2N3772 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max).

RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE mA MSD6100 USED BELOW 100 mA




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