Details, datasheet, quote on part number: 2N3773
Part2N3773
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionPower 16A 140V Discrete NPN , Package: TO-204 (TO-3), Pins=2
CompanyON Semiconductor
DatasheetDownload 2N3773 datasheet
Cross ref.Similar parts: 2N563, 2N625, 2N632, 2SD424, 2SD873, DBY5, 2N4348, 2N6322, 2SD428, BDY58
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Features, Applications

The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, to dc converters or inverters.

High Safe Operating Area (100% Tested) 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage

hFE = 15 (Min) 4 V VCE(sat) 1.4 V (Max) 0.8 A For Low Distortion Complementary Designs
16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS

Rating Symbol VCEO VCEX Value Unit Vdc Adc Collector Emitter Voltage Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage VCBO VEBO IC IB Collector Current Continuous Peak (1) Base Current Continuous Peak Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 150 0.855 Watts W/_C _C TJ, Tstg to +200

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (2) *Collector­Emitter Breakdown Voltage (IC = 0.2 Adc, = 0) VCEO(sus) VCEX(sus) 160 150 Vdc *Collector­Emitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) Collector­Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector Cutoff Current (VCE = 120 Vdc, = 0) VCER(sus) ICEO ICEX 10 mAdc *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, = 150_C) Collector Cutoff Current (VCB = 140 Vdc, = 0) *Emitter Cutoff Current (VBE = 7 Vdc, IC ICBO IEBO mAdc ON CHARACTERISTICS (2) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE 5 60 Collector­Emitter Saturation Voltage *(IC = 8 Adc, = 800 mAdc) (IC = 16 Adc, = 3.2 Adc) *Base­Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VCE(sat) Vdc 4 2.2 VBE(on) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common­Emitter Small­Signal, Short­Circuit, Forward Current Transfer Ratio (IC = 50 kHz) *Small­Signal Current Gain (IC = 1 Adc, VCE = 4 Vdc, = 1 kHz) |hfe| 4 hfe 40 SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased (non­repetitive), VCE 100 V, See Figure 12 IS/b 1.5 Adc (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. *Indicates JEDEC Registered Data.


 

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