Details, datasheet, quote on part number: 2N3773
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| Specifications, Features, Applications |
The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, to dc converters or inverters.
· High Safe Operating Area (100% Tested) 100 V· Completely Characterized for Linear Operation· High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) 4 V VCE(sat) 1.4 V (Max) 0.8 A· For Low Distortion Complementary Designs
16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS
Rating Symbol VCEO VCEX Value Unit Vdc Adc Collector Emitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage VCBO VEBO IC IB Collector Current Continuous Peak (1) Base Current Continuous Peak Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 150 0.855 Watts W/_C _C TJ, Tstg to +200
*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (2) *CollectorEmitter Breakdown Voltage (IC = 0.2 Adc, = 0) VCEO(sus) VCEX(sus) 160 150 Vdc *CollectorEmitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) CollectorEmitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector Cutoff Current (VCE = 120 Vdc, = 0) VCER(sus) ICEO ICEX 10 mAdc *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, = 150_C) Collector Cutoff Current (VCB = 140 Vdc, = 0) *Emitter Cutoff Current (VBE = 7 Vdc, IC ICBO IEBO mAdc ON CHARACTERISTICS (2) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE 5 60 CollectorEmitter Saturation Voltage *(IC = 8 Adc, = 800 mAdc) (IC = 16 Adc, = 3.2 Adc) *BaseEmitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VCE(sat) Vdc 4 2.2 VBE(on) Vdc DYNAMIC CHARACTERISTICS Magnitude of CommonEmitter SmallSignal, ShortCircuit, Forward Current Transfer Ratio (IC = 50 kHz) *SmallSignal Current Gain (IC = 1 Adc, VCE = 4 Vdc, = 1 kHz) |hfe| 4 hfe 40 SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased (nonrepetitive), VCE 100 V, See Figure 12 IS/b 1.5 Adc (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. *Indicates JEDEC Registered Data.
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