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Details, datasheet, quote on part number:2N4123
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| Part: | 2N4123 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | General Purpose Transistors , Package: TO-92 (TO-226), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download 2N4123 datasheet File size : 166 kB |
| Request For quote: | Find where to buy 2N4123
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4123/D
General Purpose Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N4123 2N4124
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 2N4124 30 40 5.0 200 625 5.0 1.5 12 55 to +150 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq J A Rq J C Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 -- -- -- -- -- 50 50 Vdc nAdc nAdc 30 25 -- -- Vdc Vdc
Motorola SmallSignal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
2N4123 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 50 120 25 60 -- -- 150 360 -- -- 0.3 0.95 Vdc Vdc --
(IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) CollectorBase Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) Current Gain -- High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 -- -- 6.0 5.0 2.5 3.0 50 120 -- -- 200 480 dB fT 2N4123 2N4124 Cibo Cc b hfe 50 120 200 480 -- 250 300 -- -- -- -- 8.0 4.0 pF pF -- MHz
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns)
200 100 70 50 30 20 tf tr td ts
3.0 2.0
Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS)
20 30 40
5.0
Figure 1. Capacitance
Figure 2. Switching Times
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4123 2N4124
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA
IC = 50 mA IC = 100 mA
SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100
0.2
0.4
1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5
hfe , CURRENT GAIN
200
100 70 50
2 1
30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 5. Current Gain
20 10 hie , INPUT IMPEDANCE (k ) 5.0 2.0 1.0 0.5 10 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 7.0 5.0 3.0 2.0
Figure 6. Output Admittance
1.0 0.7 0.5 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
Motorola SmallSignal Transistors, FETs and Diodes Device Data
3
2N4123 2N4124
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C 1.0 0.7 0.5 0.3 0.2 55°C +25°C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 9. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3 0.5 IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
1.0 0.5 0 0.5 1.0 1.5 2.0 55°C to +25°C +25°C to +125°C +25°C to +125°C
qVC for VCE(sat)
55°C to +25°C
qVB for VBE(sat)
0
20
40
60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)
180 200
Figure 11. "On" Voltages
Figure 12. Temperature Coefficients
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Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4123 2N4124
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION XX
DIM A B C D F G H J K L N P R V
CASE 02904 (TO226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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