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Details, datasheet, quote on part number:2N4918
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| Part: | 2N4918 |
| Category: | Discrete => Transistors => Bipolar => Power |
| Description: | Medium-power Plastic PNP Silicon Transistors , Package: TO-225, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download 2N4918 datasheet File size : 117 kB |
| Request For quote: | Find where to buy 2N4918
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Datasheet text preview:
ON Semiconductor )
Medium-Power Plastic PNP Silicon Transistors
. . . d e s i g n e d for driver circuits, switching, and amplifier applications. These highperformance plastic devices feature:
2N4918 thru 2N4920 *
*ON Semiconductor Preferred Device
· Low Saturation Voltage -- · · · ·
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction -- PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to NPN 2N4921, 2N4922, 2N4923
3 AMPERE GENERALPURPOSE POWER TRANSISTORS 4080 VOLTS 30 WATTS
ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
Ratings Symbol VCEO VCB VEB IC* IB 2N4918 40 40 2N4919 60 60 2N4920 80 80 Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 5.0 1.0 3.0 1.0 Collector Current -- Continuous (1) Base Current Total Power Dissipation @ TC = 25°C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C TJ, Tstg 65 to +150
32 1
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 7709 TO225AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
JC 4.16 _C/W *Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual currenthandling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. Thermal Resistance, Junction to Case
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 Rev. 10
Publication Order Number: 2N4918/D
2N4918 thru 2N4920
40 PD, POWER DISSIPATION (WATTS)
30
20
10
0
25
50
75 100 TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
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2N4918 thru 2N4920
Cjd << Ceb t2 Vin APPROX -11 V 0 APPROX 9.0 V +4.0 V
RB and RC varied to obtain desired current levels
t, TIME ( µs)
ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit CollectorEmitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) Vdc 2N4918 2N4919 2N4920 40 60 80 -- -- -- -- -- -- Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) ICEO mAdc 2N4918 2N4919 2N4920 0.5 0.5 0.5 Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C Collector Cutoff Current (VCB = Rated VCB, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEX mAdc -- -- -- -- 0.1 0.5 0.1 1.0 ICBO IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- 40 30 10 -- -- -- -- 150 -- 0.6 1.3 1.3 CollectorEmitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) BaseEmitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) BaseEmitter On Voltage (1) (IC = 1.0 Adc, VCE = 1.0 Vdc) VCE(sat) VBE(sat) VBE(on) Vdc Vdc Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) fT 3.0 -- -- MHz pF -- Cob hfe 100 -- SmallSignal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: PW [ 300 µs, Duty Cycle [ 2.0% 25 VBE(off) 0 Vin APPROX -11 V t1 5.0 VCC Vin RC RB SCOPE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V tr VCC = 60 V 3.0 2.0 VCC = 30 V IC/IB = 20 IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C VCC = 60 V td VBE(off) = 2.0 V t3 TURN-OFF PULSE t1 < 15 ns 100 < t2 < 500 µs t3 < 15 ns DUTY CYCLE 2.0% VCC = 30 V VBE(off) = 0 20 30 10 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000
Figure 2. Switching Time Equivalent Test Circuit
Figure 3. TurnOn Time
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2N4918 thru 2N4920
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.01 SINGLE PULSE D = 0.5 0.2 JC(t) = r(t) JC JC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.1 0.07 0.05 0.03 0.02 0.01 0.01
t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000
t1
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
50
Figure 4. Thermal Response
10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25°C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 TJ = 150°C 5.0 ms 1.0 ms 100 µs
dc
0.2 0.1 1.0
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC V C E operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J ( p k ) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J ( p k ) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 5. ActiveRegion Safe Operating Area
5.0 3.0 2.0 t s, STORAGE TIME ( µs) 1.0 0.7 0.5 0.3 0.2 IC/IB = 10
5.0 IC/IB = 20 3.0 2.0 t f , FALL TIME ( µs) 1.0 0.7 0.5 0.3 0.2 IC/IB = 20
TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2
ts = ts - 1/8 tf TJ = 25°C TJ = 150°C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000
IC/IB = 10
0.1 0.07 0.05
0.1 0.07 0.05
10
20
30
50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500 700 1000
Figure 6. Storage Time
Figure 7. Fall Time
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2N4918 thru 2N4920
TYPICAL DC CHARACTERISTICS
VCE = 1.0 V TJ = 150°C 25°C -55°C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 0.8 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 IC = 0.1 A 0.25 A 0.5 A 1.0 A
1.0
2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA)
50
100
200
Figure 8. Current Gain
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
Figure 9. Collector Saturation Region
108 107 106 105 104 103 ICES VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150 IC = 10 ICES VCE = 30 V
1.5 1.2 VOLTAGE (VOLTS) 0.9 0.6 0.3 0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V
TJ = 25°C
IC ICES IC = 2x ICES
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of BaseEmitter Resistance
Figure 11. "On" Voltage
102 TEMPERATURE COEFFICIENTS (mV/ °C) IC, COLLECTOR CURRENT ( µA) 101 100 10-1 10-2 104 REVERSE 103 -0.2 -0.1 TJ = 150°C
+2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 2.0 3.0 5.0 VB FOR VBE 10 20 30 50 100 200 300 500 1000 2000 *VC FOR VCE(sat) TJ = -55°C to +100°C *APPLIES FOR IC/IB < hFE @ VCE + 1.0 V 2 TJ = 100°C to 150°C
100°C IC = ICES 25°C FORWARD 0 +0.1 +0.2
VCE = 30 V
+0.3
+0.4
+0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector CutOff Region
Figure 13. Temperature Coefficients
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