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Part: 2N5062
Category:
Discrete
-> Thyristors
-> SCR (Silicon Controlled Rectifiers)
Description: Thyristor .8A 100V , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download 2N5062 datasheet File size : 83 kB
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Datasheet text preview:
2N5060 Series Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. · Sensitive Gate Trigger Current -- 200 µA Maximum · Low Reverse and Forward Blocking Current -- 50 µA Maximum, TC = 110°C · Low Holding Current -- 5 mA Maximum · Passivated Surface for Reliability and Uniformity · Device Marking: Device Type, e.g., 2N5060, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive OffState Voltage(1) (TJ = to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 Symbol VDRM, VRRM 30 60 100 200 IT(RMS) IT(AV) 0.51 0.255 ITSM 10 Amps 0.8 Amp Amp TO92 (TO226AA) CASE 029 STYLE 10 1 2 Value Unit Volts
Preferred Device
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SCRs 0.8 AMPERES RMS 30 thru 200 VOLTS
G A K
*40
On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State Current (180° Conduction Angles) (TC = 67°C) (TC = 102°C) *Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) *Forward Peak Gate Power (Pulse Width 1.0 µsec; TA = 25°C)
3
PIN ASSIGNMENT
1 I2t PGM PG(AV) IGM VRGM TJ Tstg 0.4 0.1 0.01 1.0 5.0 40 to +110 40 to +150 A2s Watt Watt 2 3 Cathode Gate Anode
v v v
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms) * F o r w a r d Peak Gate Current (Pulse Width 1.0 µsec; TA = 25°C) *Reverse Peak Gate Voltage (Pulse Width 1.0 µsec; TA = 25°C) *Operating Junction Temperature Range *Storage Temperature Range *Indicates JEDEC Registered Data.
ORDERING INFORMATION
Amp Volts
Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
°C °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2000
1
May, 2000 Rev. 4
Publication Order Number: 2N5060/D
2N5060 Series
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case(1) Thermal Resistance, Junction to Ambient *Lead Solder Temperature (Lead Length 1/16 from case, 10 s Max) Symbol RJC RJA -- Max 75 200 +230* Unit °C/W °C/W °C
q
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current( 2 ) (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C IDRM, IRRM -- -- -- -- 10 50 µA µA
ON CHARACTERISTICS
*Peak Forward OnState Voltage(3) (ITM = 1.2 A peak @ TA = 25°C) Gate Trigger Current (Continuous dc)(4) *(VAK = 7 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc)(4) *(VAK = 7 Vdc, RL = 100 Ohms) *Gate NonTrigger Voltage (VAK = Rated VDRM, RL = 100 Ohms) Holding Current ( 4 ) *(VAK = 7 Vdc, initiating current = 20 mA) Turn-On Time Delay Time Rise Time (IGT = 1 mA, VD = Rated VDRM, F o r w a r d Current = 1 A, di/dt = 6 A/µs Turn-Off Time ( F o r w a r d Current = 1 A pulse, Pulse Width = 50 µs, 0.1% Duty Cycle, di/dt = 6 A/µs, dv/dt = 20 V/µs, IGT = 1 mA) TC = 25°C TC = 40°C TC = 25°C TC = 40°C TC = 110°C TC = 25°C TC = 40°C IH VGT VGD 0.1 -- -- -- -- -- -- -- 3.0 0.2 -- 5.0 10 -- -- mA µs td tr VTM IGT -- -- -- -- -- -- -- -- 200 350 0.8 1.2 Volts Volts -- -- 1.7 Volts µA
tq
µs
2N5060, 2N5061 2N5062, 2N5064
-- --
10 30
-- --
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage (Rated VDRM, Exponential) *Indicates JEDEC Registered Data. (1) This measurement is made with the case mounted "flat side down" on a heat sink and held in position by means of a metal clamp over the curved surface. (2) RGK = 1000 is included in measurement. (3) Forward current applied for 1 ms maximum duration, duty cycle 1%. (4) RGK current is not included in measurement. dv/dt -- 30 -- V/µs
p
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2
2N5060 Series
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
130 120 110 100 dc 90 80 70 60 50 0 0.1 0.2 0.3 0.4 = 30° 60° 120° = CONDUCTION ANGLE
a TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C)
130 = CONDUCTION ANGLE 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING
CASE MEASUREMENT POINT CENTER OF FLAT PORTION
90
90°
180°
70
dc
50 = 30° 30 0 0.1 60° 0.2 90° 120° 0.3 180° 0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
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3
2N5060 Series
CURRENT DERATING
5.0 ITSM , PEAK SURGE CURRENT (AMP)
10 7.0 5.0
3.0 2.0 TJ = 110°C 25°C 1.0 0.7 0.5
3.0 2.0
i T , INSTANTANEOUS ON-STATE CURRENT (AMP)
1.0 1.0 0.3 0.2
2.0
3.0
5.0 7.0
10
20
30
50 70
100
NUMBER OF CYCLES
Figure 4. Maximum NonRepetitive Surge Current
0.8 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.1 0.07 0.05 120° 0.6 a = CONDUCTION ANGLE = 30° 60° 90°
180°
0.03 0.02
0.4 dc 0.2
0.01 0 0.5 1.0 1.5 2.0 2.5 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage
r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED
Figure 5. Power Dissipation
1.0 0.5
0.2 0.1 0.05
0.02 0.01 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (SECONDS)
Figure 6. Thermal Response
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4
2N5060 Series
TYPICAL CHARACTERISTICS
0.8 VG , GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 100 RGK = 1.0 k
I GT , GATE TRIGGER CURRENT (NORMALIZED)
200 100 50 2N5062-64 20 10 5.0 2N5060-61 2.0 1.0 0.5 0.2 75 50 25 0 25 50 75 100 110 TJ, JUNCTION TEMPERATURE (°C) VAK = 7.0 V RL = 100
0.7
0.6
0.5
0.4 0.3 75
50
25
0
25
50
75
100 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage
Figure 8. Typical Gate Trigger Current
4.0 I H , HOLDING CURRENT (NORMALIZED) 3.0 2.0 VAK = 7.0 V RL = 100 RGK = 1.0 k
1.0 0.8
2N5060,61 2N5062-64
0.6 0.4 75
50
25
0
25
50
75
100 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Holding Current
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5
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