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Details, datasheet, quote on part number: 2N5087
 
 
Part number2N5087
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionSmall Signal Amplifier PNP , Package: TO-92 (TO-226), Pins=3
CompanyON Semiconductor
DatasheetDownload 2N5087 datasheet
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Specifications, Features, Applications

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value to +150 Unit Vdc mAdc mW mW/°C Watts mW/°C °C COLLECTOR 3 Symbol RqJA RqJC Max 200 83.3 Unit °C/W 1 EMITTER 2 BASE

Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case

Collector­Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, = 0) Collector­Base Breakdown Voltage (IC = 100 µAdc, = 0) Collector Cutoff Current (VCB = 35 Vdc, = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO Vdc nAdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE 5.0 Vdc)(1) Collector­Emitter Saturation Voltage (IC = 10 mAdc, = 1.0 mAdc) Base­Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 VCE(sat) VBE(on) 0.3 0.85 Vdc

Current­Gain Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, = 20 MHz) Collector­Base Capacitance (VCB = 5.0 Vdc, = 1.0 MHz) Small­Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, = 1.0 kHz) Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, = 1.0 kHz) (IC = 100 µAdc, VCE = 5.0 Vdc, = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT Ccb hfe 40 4.0 MHz pF

en = Noise Voltage of the Transistor referred to the input. (Figure In = Noise Current of the Transistor referred to the input. (Figure K = Boltzman's Constant x 10­23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)




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