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Details, datasheet, quote on part number:2N5551RL1
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| Part: | 2N5551RL1 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | Small Signal Amplifier NPN , Package: TO-92 (TO-226), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download 2N5551RL1 datasheet File size : 70 kB |
| Request For quote: | Find where to buy 2N5551RL1
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Datasheet text preview:
ON Semiconductort
Amplifier Transistors
NPN Silicon
2N5550 2N5551*
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 55 to +150 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 2911, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2 BASE
COLLECTOR 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min
1 EMITTER Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 µAdc, IE = 0 ) EmitterBase Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO -- -- -- -- -- 100 50 100 50 50 nAdc µAdc nAdc 160 180 6.0 -- -- -- Vdc 140 160 -- -- Vdc Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 Rev. 1
Publication Order Number: 2N5550/D
2N5550 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 -- -- -- 1.0 1.2 1.0 -- -- -- 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 -- -- 250 250 -- -- Vdc --
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) BaseEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5550 2N5551 2N5550 2N5551 hfe NF -- -- 10 8.0 fT Cobo Cibo -- -- 50 30 20 200 -- dB 100 -- 300 6.0 MHz pF pF
500 300 h FE, DC CURRENT GAIN 200 100 50 30 20 10 7.0 5.0 0.1 -55°C TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
Figure 1. DC Current Gain
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2N5550 2N5551
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
Figure 2. Collector Saturation Region
101 IC, COLLECTOR CURRENT ( µA) 100 10-1 10-2 10-3 10-4 10-5 0.4 0.3 VCE = 30 V
TJ = 125°C 75°C REVERSE 25°C
IC = ICES
FORWARD
0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.5
0.6
Figure 3. Collector CutOff Region
V, TEMPERATURE COEFFICIENT (mV/°C)
1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2
TJ = 25°C
2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = -55°C to +135°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
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2N5550 2N5551
100 70 50 C, CAPACITANCE (pF) 10.2 V Vin 10 µs INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 µF VBB -8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Cibo Cobo TJ = 25°C
Values Shown are for IC @ 10 mA
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V 5000 3000 2000 1000 500 300 200 100 100 200 50 0.2 0.3 0.5 1.0
Figure 7. Capacitances
IC/IB = 10 TJ = 25°C tr @ VCC = 120 V
tf @ VCC = 120 V tf @ VCC = 30 V
IC/IB = 10 TJ = 25°C
t, TIME (ns)
ts @ VCC = 120 V
1.0
10 20 30 50 IC, COLLECTOR CURRENT (mA)
2.0 3.0 5.0
2.0 3.0 5.0
10
20 30 50
100
200
IC, COLLECTOR CURRENT (mA)
Figure 8. TurnOn Time
Figure 9. TurnOff Time
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2N5550 2N5551
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AL
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
B
K
XX G H V
1
D J C SECTION XX N N
YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D G H J K L N P R V
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