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Part: 2N5555
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
Description: JFET Switching , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download 2N5555 datasheet File size : 69 kB
Request For quote: Find where to buy 2N5555
Datasheet text preview:
ON Semiconductort
1 DRAIN
JFET Switching
NChannel -- Depletion
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg
3 GATE
2N5555
2 SOURCE
Value 25 25 25 10 350 2.8 65 to +150 65 to +150
Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C
1 2 3
CASE 2911, STYLE 5 TO92 (TO226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100°C) V(BR)GSS IGSS ID(off) 25 -- -- -- -- 1.0 10 2.0 Vdc nAdc nAdc µAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) GateSource Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) DrainSource OnVoltage (ID = 7.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 0.1 mAdc, VGS = 0) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. IDSS VGS(f) VDS(on) rDS(on) 15 -- -- -- -- 1.0 1.5 150 mAdc Vdc Vdc Ohms
SMALLSIGNAL CHARACTERISTICS
SmallSignal DrainSource "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) rds(on) Ciss Cr s s -- -- -- 150 5.0 1.2 Ohms pF pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, , , VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi 1) (VDD = 10 Vdc, ID(on) = 7.0 mAdc, , , VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi 1) td(on) tr td(off) tf -- -- -- -- 5.0 5.0 15 10 ns ns ns ns
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 Rev. 3
Publication Order Number: 2N5555/D
2N5555
PULSE WIDTH VDD 1.0 k PULSE GENERATOR (50 OHMS) 50 OHM COAXIAL CABLE 1.0 k 50 10 k 90% 50 OHM COAXIAL CABLE TEKTRONIX 567 SAMPLING SCOPE INPUT 50% 10% INPUT PULSE RISE TIME 90% 50% 10% VGS(on) VGS(off)
INPUT PULSE FALL TIME
Rin = 50 OHMS OUTPUT td(on) 10% 90% tr 90% tf td(off) 10%
INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS
Figure 1. Switching Times Test Circuit
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100 brs @ IDSS 0.25 IDSS
gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos)
gis @ IDSS gis @ 0.25 IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.1 0.07 0.05
Figure 2. Input Admittance (yis)
Figure 3. Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos)
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 |bfs| @ IDSS |bfs| @ 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 gos @ IDSS bos @ IDSS and 0.25 IDSS
gfs @ IDSS gfs @ 0.25 IDSS
0.05 0.02 0.01 10 20 30 gos @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100
500 700 1000
Figure 4. Forward Transadmittance (yfs) http://onsemi.com
2
Figure 5. Output Admittance (yos)
2N5555
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 40° 20° 10° 0° 1.0 350° 100 100 50° 0.9 200 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 400 500 600 0.6 900 800 700 900 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 320° ID = 0.25 IDSS 200 300 400 500 300° 60° 310° 50° ID = IDSS, 0.25 IDSS 800 600 400 300 200 100 0.0 700 500 0.1 900 0.2 300° 290° 280° 270° 260° 250° 240° 0.3 310°
0.7
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure 6. S11s
30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20°
Figure 7. S12s
10° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320°
50°
0.6
310°
50°
310°
60° 70° 80° 90° 100° 110° 120° 900 800 700 600 500 400 300 ID = IDSS 200 100 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 900
0.5
300° 290° 280° 270°
60° 70° 80° 90° 100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
0.4
0.7
0.3
0.6
0.3
260° 250° 240°
0.4
0.5
130° 0.6 140° 150° 160° 170° 180° 190° 200° 210°
230°
130°
230°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure 8. S21s http://onsemi.com
3
Figure 9. S22s
2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 20 30 gig @ IDSS, 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
gig @ IDSS grg @ 0.25 IDSS
big @ IDSS
big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
Figure 10. Input Admittance (yig)
Figure 11. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos)
3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
gfg @ 0.25 IDSS
gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos)
10 7.0 5.0
gfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10
bog @ IDSS, 0.25 IDSS
gog @ IDSS
brg @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz)
gog @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
500 700 1000
Figure 12. Forward Transfer Admittance (yfg)
Figure 13. Output Admittance (yog)
http://onsemi.com
4
2N5555
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 200 200 300 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 320°
ID = 0.25 IDSS 400 500 600 400 500 600 700 700 800 900
310°
50°
0.03
310°
300
60° 70° 80° 90° 100° 110° 120° 130°
300° 290° 280° 270° 260° 250° 240° 230°
60° 70° 80° 90° 100° 110° 120° 130° 600 ID = IDSS 700 800 900 900 100 500 600 700 800
0.02
300° 290° 280° 270°
0.4
ID = IDSS
0.01
0.3
800 900
0.0
ID = 0.25 IDSS 0.01
260° 250° 240° 230°
0.02
0.03 220° 190° 200° 210°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170°
0.04 180°
Figure 14. S11g
30° 40° 20° 10° 0° 0.5 100 100 0.3 ID = IDSS 310° 50° 350° 340° 330° 320° 40° 30° 20°
Figure 15. S12g
10° 0° 1.5 1.0 100 0.9 350° 300 200 400 340° 500 600 700 800 900 310° 330° 320°
0.4 50°
ID = IDSS, 0.25 IDSS 0.8
60° 70° 80° 90° 100° 110° 120° 130°
300° ID = 0.25 IDSS 290° 280° 900 900 270° 260° 250° 240° 230°
60° 70° 80° 90° 100° 110° 120° 130°
300° 290° 280° 270° 260° 250° 240° 230°
0.2
0.7
0.1
0.6
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure 16. S21g http://onsemi.com
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Figure 17. S22g
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