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Part: 2N6349
Category:
Discrete
-> Thyristors
-> Triacs
Description: Triac, Package: TO-220, Pins=3
Company: ON Semiconductor
Datasheet: Download 2N6349 datasheet File size : 138 kB
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Datasheet text preview:
2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. · Blocking Voltage to 800 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in all Four Quadrants · For 400 Hz Operation, Consult Factory · Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating * Peak Repetitive OffState Voltage(1) (TJ = 40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344 2N6349 *OnState RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) *Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current (TC = +80°C, Pulse Width = 2.0 µs) *Peak Gate Voltage (TC = +80°C, Pulse Width = 2.0 µs) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 8.0 4.0 ITSM 100 Amps Amps Value Unit Volts 1
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TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
MT2 G MT1
4
2
3
TO220AB CASE 221A STYLE 4
PIN ASSIGNMENT
1 I2t PGM PG(AV) IGM VGM TJ Tstg 40 20 0.5 2.0 10 40 to +125 40 to +150 A2s Watts Watt 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
Amps Volts °C °C
Preferred devices are recommended choices for future use and best overall value.
Device 2N6344 2N6349
Package TO220AB TO220AB
Shipping 500/Box 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 1999
1
March, 2000 Rev. 1
Publication Order Number: 2N6344/D
2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 2.2 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 100°C IDRM, IRRM -- -- -- -- 10 2.0 µA mA
ON CHARACTERISTICS
* Peak OnState Voltage (ITM = A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
"11
p2%)
VTM IGT
--
1.3
1.55
Volts mA
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40°C *MT2(+), G(); MT2(), G(+) TC = 40°C Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40°C *MT2(+), G(); MT2(), G(+) TC = 40°C Gate NonTrigger Voltage (Continuous dc) (VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C) *MT2(+), G(+); MT2(), G(); MT2(+), G(); MT2(), G() * Holding Current (VD = 12 Vdc, Gate Open) (Initiating Current = mA)
-- -- -- -- -- -- VGT -- -- -- -- -- -- VGD 0.2 IH TC = 25°C *TC = 40°C tgt -- -- --
12 12 20 35 -- --
50 75 50 75 100 125 Volts
0.9 0.9 1.1 1.4 -- --
2.0 2.5 2.0 2.5 2.5 3.0 Volts
-- 6.0 -- 1.5
-- mA 40 75 2.0 µs
"200
* Turn-On Time (VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. dv/dt(c) -- 5.0 -- V/µs
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2
2N6344, 2N6349
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT () MT2 () MT2
+ IGT
Quadrant III
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.
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3
2N6344, 2N6349
100 60° 90° 92 84 80 = CONDUCTION ANGLE dc 120° 180° 88 PAV , AVERAGE POWER (WATTS) = 30° TC , CASE TEMPERATURE ( °C) 96 10 8.0 = CONDUCTION ANGLE 60° TJ 100°C 30° 90° dc = 180° 120°
6.0
[
4.0
2.0
0 0 1.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT, (AMP) 2.0 7.0 8.0
0
1.0
5.0 2.0 3.0 4.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP)
7.0
8.0
Figure 1. RMS Current Derating
Figure 2. OnState Power Dissipation
1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 0.6 0.4 60 40 20 1 QUADRANTS 2 3 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 I GT , GATE TRIGGER CURRENT (mA) OFF-STATE VOLTAGE = 12 V
50 OFF-STATE VOLTAGE = 12 V 30 20
10 7.0
QUADRANT
1 2 3 4
5.0 60
40
20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
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4
2N6344, 2N6349
100 I H , HOLDING CURRENT (mA) 70 50 30 20 i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) TJ = 100°C 10 7.0 5.0 3.0 2.0 100 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 80 25°C 20 GATE OPEN MAIN TERMINAL #1 POSITIVE
10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 60
40
20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C)
120
140
Figure 6. Typical Holding Current
60 CYCLE TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10
40
20 0
0.1 0.4
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
4.4
Figure 5. OnState Characteristics
Figure 7. Maximum NonRepetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.5
0.2 0.1 0.05
ZJC(t) = r(t) · RJC
0.02 0.01 0.1
0.2
0.5
1.0
2.0
5.0
20 50 t,TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 8. Typical Thermal Response
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5
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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