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Details, datasheet, quote on part number:2N6349A
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Datasheet text preview:
2N6344A, 2N6348A, 2N6349A
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. · Blocking Voltage to 800 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in all Four Quadrants · For 400 Hz Operation, Consult Factory · 8 Ampere Devices Available as 2N6344 thru 2N6349 · Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating *Peak Repetitive OffState Voltage(1) (Gate Open, TJ = 40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344A, 2N6348A 2N6349A *OnState RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80°C) (TC = +95°C) *Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2.0 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current (Pulse Width = 2.0 µs; TC = +80°C) *Peak Gate Voltage (Pulse Width = 2.0 µs; TC = +80°C) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 12 6.0 ITSM 100 A 1 I2t PGM PG(AV) IGM VGM TJ Tstg 59 20 0.5 2.0 A2s Watts Watt A Volts °C °C 2 3 4 A Value Unit Volts 1
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TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
MT2 G MT1
4
2
3
TO220AB CASE 221A STYLE 4
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
Device 2N6344A 2N6348A 2N6349A Package TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box
"10
40 to +125 40 to +150
*Indicates JEDEC Registered Data. (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 1999
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February, 2000 Rev. 1
Publication Order Number: 2N6344A/D
2N6344A, 2N6348A, 2N6349A
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 2.0 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM -- -- -- -- 10 2.0 µA mA
ON CHARACTERISTICS
*Peak On-State Voltage (ITM = A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
"17
p 2%)
VTM IGT
--
1.3
1.75
Volts mA
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40°C *MT2(+), G(); MT2(), G(+) TC = 40°C Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40°C *MT2(+), G(); MT2(), G(+) TC = 40°C Gate NonTrigger Voltage (VD = Rated VDRM, RL = 10 k ohms, TJ = 110°C) *MT2(+), G(+); MT2(), G(); MT2(+), G(); MT2(), G(+) Holding Current (VD = 12 Vdc, Gate Open) Initiating Current = mA
-- -- -- -- -- -- VGT -- -- -- -- -- -- VGD 0.2 IH TC = 25°C *TC = 40°C tgt -- -- --
6.0 6.0 10 25 -- --
50 75 50 75 100 125 Volts
0.9 0.9 1.1 1.4 -- --
2.0 2.5 2.0 2.5 2.5 3.0 Volts
-- 6.0 -- 1.5
-- mA 40 75 2.0 µs
"200
*Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. dv/dt(c) -- 5.0 -- V/µs
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2N6344A, 2N6348A, 2N6349A
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT () MT2 () MT2
+ IGT
Quadrant III
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.
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2N6344A, 2N6348A, 2N6349A
110 TC , CASE TEMPERATURE ( °C) 30° 60° 100 90° 120° 90 80 = CONDUCTION ANGLE 70 0 2.0 dc 0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT, (AMP) 14 0 2.0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 14 180° PAV , AVERAGE POWER (WATTS) 20 12 = CONDUCTION ANGLE TJ = 110°C 90° 180° 120° 60 = 30° ° dc
16
8.0
4.0
Figure 1. RMS Current Derating
Figure 2. OnState Power Dissipation
1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 0.6 0.4 60 40 20 1 QUADRANTS 2 3 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 I GT , GATE TRIGGER CURRENT (mA) VD = 12 V
50 VD = 12 V 30 20
10 7.0
QUADRANT
1 2 3 4
5.0 60
40
20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
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2N6344A, 2N6348A, 2N6349A
100 70 50 30 20 i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) TJ = 100°C 10 7.0 5.0 3.0 2.0 100 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 80 25°C I H , HOLDING CURRENT (mA) 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 60 20 GATE OPEN MAIN TERMINAL #1 POSITIVE
40
20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C)
120
140
Figure 6. Typical Holding Current
60 CYCLE TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10
40
20 0
0.1 0.4
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. OnState Characteristics
Figure 7. Maximum NonRepetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.5
0.2 0.1 0.05
ZJC(t) = r(t) · RJC
0.02 0.01 0.1
0.2
0.5
1.0
2.0
5.0
20 50 t,TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 8. Typical Thermal Response
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