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Part: 2N6505T
Category:
Discrete
-> Thyristors
-> SCR (Silicon Controlled Rectifiers)
Description: Silicon Controlled Rectifiers , Package: TO-220, Pins=3
Company: ON Semiconductor
Datasheet: Download 2N6505T datasheet File size : 99 kB
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Datasheet text preview:
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. · Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability · Blocking Voltage to 800 Volts · 300 A Surge Current Capability · Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating *Peak Repetitive OffState Voltage (Note 1.) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State RMS Current (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) Forward Peak Gate Power (Pulse Width 1.0 µs, TC = 85°C) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Forward Peak Gate Current (Pulse Width 1.0 µs, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Symbol VDRM, VRRM 50 100 400 600 800 IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg 25 16 250 20 0.5 2.0 40 to +125 40 to +150 A A A Watts 1 Watts A °C 2 3 4 1 2 3 x = 4, 5, 7, 8 or 9 YY = Year WW = Work Week Value Unit Volts
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SCRs 25 AMPERES RMS 50 thru 800 VOLTS
G A K
MARKING DIAGRAM
4 TO220AB CASE 221A STYLE 3 YY WW 650x
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMATION
°C Device 2N6504 2N6505 2N6507 2N6508 2N6509 Package TO220AB TO220AB TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box 500/Box 500/Box
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 Rev. 4
Publication Order Number: 2N6504/D
2N6504 Series
*THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol R J C TL Max 1.5 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C 10 2.0 µA mA
ON CHARACTERISTICS
*Forward OnState Voltage (Note 2.) (ITM = 50 A) *Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) *Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms, TC = 40°C) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) *Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) * Turn-On Time (ITM = 25 A, IGT = 50 mAdc) Turn-Off Time (VDRM = rated voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125°C) TC = 25°C TC = 40°C tgt tq 15 35 TC = 25°C TC = 40°C VTM IGT VGT VGD IH 0.2 9.0 1.0 18 1.5 1.8 30 75 1.5 40 80 2.0 µs µs Volts mA Volts Volts mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. dv/dt 50 V/µs
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2
2N6504 Series
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
TC , MAXIMUM CASE TEMPERATURE ( °C)
P(AV) , AVERAGE POWER (WATTS)
13 0 12 0 110 10 0 90 80 = CONDUCTION ANGLE
32 = CONDUCTION ANGLE 60° = 30° 180° 90° dc
24
16 TJ = 125°C
= 30°
60°
90°
180°
dc
8.0
0
8.0 12 16 IT(AV), ON STATE FORWARD CURRENT (AMPS)
4.0
20
0
0
4.0 8.0 12 16 IT(AV), AVERAGE ON STATE FORWARD CURRENT (AMPS)
20
Figure 1. Average Current Derating
Figure 2. Maximum OnState Power Dissipation
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3
2N6504 Series
100 70 50 30 20 iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 25°C
125°C
10 7.0 5.0 3.0 2.0
300 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 275 250 225 TC = 85°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES
1.0 0.7 0.5 0.3 0.2
200 175 1.0
0.1
0
0.4
0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS)
2.4
2.8
Figure 3. Typical OnState Characteristics
Figure 4. Maximum NonRepetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZJC(t) = RJC · r(t)
Figure 5. Thermal Response
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4
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100 VGT, GATE TRIGGER VOLTAGE (VOLTS) -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 I GT, GATE TRIGGER CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125
10
1 -40 -25
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage versus Junction Temperature
100
IH , HOLDING CURRENT (mA)
10
1 -40 -25 -10
5
20
35
50
65
80
95
110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current versus Junction Temperature
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5
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