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Part: 2N6515
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: High Voltage Transistors , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download 2N6515 datasheet File size : 86 kB
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Datasheet text preview:
ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 55 to +150 mAdc mAdc mW mW/°C Watts mW/°C °C 2N6515 250 250 2N6517 2N6520 350 350 Unit Vdc Vdc Vdc
NPN 2N6515 2N6517 PNP 2N6520
Voltage and current are negative for PNP transistors
1 2 3
PD
CASE 2904, STYLE 1 TO92 (TO226AA)
TJ, Tstg
COLLECTOR 3 2 BASE NPN 1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
COLLECTOR 3
2 BASE PNP 1 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 µAdc, IE = 0 ) EmitterBase Breakdown Voltage (IE = 10 µAdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
© Semiconductor Components Industries, LLC, 2001
V(BR)CEO 2N6515 2N6517, 2N6520 V(BR)CBO 2N6515 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6520 6.0 5.0 250 350 250 350
Vdc
Vdc
Vdc
1
October, 2001 Rev. 3
Publication Order Number: 2N6515/D
NPN 2N6515 2N6517 PNP 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6520 50 50 50 50 nAdc nAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 20 50 30 50 30 45 20 25 15 300 200 220 200 Vdc
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) BaseEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6520 fT Ccb Ceb 80 100 40 200 6.0 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) TurnOff Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff 200 3.5 µs µs
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2
NPN 2N6515 2N6517 PNP 2N6520
200 VCE = 10 V TJ = 125°C
hFE , DC CURRENT GAIN
100 70 50
25°C
-55°C
30 20 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 1. DC Current Gain NPN 2N6515
200
VCE = 10 V
TJ = 125°C hFE , DC CURRENT GAIN
200 VCE = -10 V 100 70 50 30 20 TJ = 125°C 25°C -55°C
hFE , DC CURRENT GAIN
100 70 50 30 20
25°C
-55°C
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100
10 -1.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 2. DC Current Gain NPN 2N6517
Figure 3. DC Current Gain PNP 2N6520
BANDWIDTH PRODUCT (MHz)
100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz
BANDWIDTH PRODUCT (MHz)
100 70 50 TJ = 25°C VCE = -20 V f = 20 MHz
30 20
30 20
f T, CURRENT-GAIN
10 1.0
f T, CURRENT-GAIN
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70
100
10 -1.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 4. CurrentGain Bandwidth Product NPN 2N6515, 2N6517
Figure 5. CurrentGain Bandwidth Product PNP 2N6520
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3
NPN 2N6515 2N6517 PNP 2N6520
NPN
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0
TJ = 25°C V, VOLTAGE (VOLTS)
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V TJ = 25°C
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 6. "On" Voltages NPN 2N6515, 2N6517
Figure 7. "On" Voltages PNP 2N6520
RV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0 1.5 1.0 0.5 0
IC + 10 IB 25°C to 125°C RVC for VCE(sat) -55°C to 25°C -55°C to 125°C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100
RV, TEMPERATURE COEFFICIENTS (mV/°C)
2.5
2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -1.0
IC + 10 IB 25°C to 125°C RVB for VBE -55°C to 25°C
-0.5 -1.0 -1.5 -2.0 -2.5 1.0
RVC for VCE(sat)
-55°C to 125°C -50 -70 -100
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA)
Figure 8. Temperature Coefficients NPN 2N6515, 2N6517
Figure 9. Temperature Coefficients PNP 2N6520
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5
TJ = 25°C C, CAPACITANCE (pF) Ceb
100 70 50 30 20 10 7.0 5.0 3.0 2.0
Ceb
TJ = 25°C
Ccb
Ccb
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100 200
1.0 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS)
-100 -200
Figure 10. Capacitance NPN 2N6515, 2N6517 http://onsemi.com
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Figure 11. Capacitance PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C t, TIME (ns) 1.0 k 700 500 300 200 100 70 50 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 VCE(off) = -100 V IC/IB = 5.0 TJ = 25°C
td @ VBE(off) = 2.0 V
td @ VBE(off) = 2.0 V tr
tr
Figure 12. TurnOn Time NPN 2N6515, 2N6517
Figure 13. TurnOn Time PNP 2N6520
10 k 7.0 k 5.0 k 3.0 k t, TIME (ns) 2.0 k 1.0 k 700 500 300 200 100 1.0 tf
2.0 k ts 1.0 k 700 500 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0
ts
tf
VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 14. TurnOff Time NPN 2N6515, 2N6517
Figure 15. TurnOff Time PNP 2N6520
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Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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